BC858CW-G

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150°C SOT-323 0.087 (2.20) 0.079 (2.00) 3 0.053(1.35) 0.045(1.15) 1 2 0.006 (0.15) 0.003 (0.08) 0.055 (1.40) 0.047 (1.20) 0.096 (2.45) 0.085 (2.15) 0.039 (1.00) 0.035 (0.90) Mechanical data -Case: SOT-323, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 0.018 (0.46) 0.010 (0.26) Circuit diagram 3 -1.BASE -2.EMITTER -3.COLLECTOR 1 Dimensions in inches and (millimeter) 2 Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage BC856W-G BC857W-G BC858W-G VCBO -80 -50 -30 V Collector-Emitter Voltage BC856W-G BC857W-G BC858W-G VCEO -65 -45 -30 V VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 TSTG -65 to +150 Emitter-Base Voltage Storage Temperature Range Company reserves the right to improve product design , functions and reliability without notice. O C O C REV:B Page 1 QW-BTR36 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristics (TA= 25 °C unless otherwise specified) Symbol Parameter Test Conditions MIN MAX Units BC856W-G BC857W-G BC858W-G VCBO IC = -10μA , IE=0 -80 -50 -30 V BC856W-G BC857W-G BC858W-G VCEO IC = -10mA , IB=0 -65 -45 -30 V Emitter-Base Breakdown Voltage VEBO IE = -1μA , IC=0 -5 V Collector Cut-off Current ICBO VCB= -30V , IE=0 hFE VCE = -5V , IC= -2mA Collector-Emitter Saturation Voltage VCE(sat) IC =-100mA , IB=-5mA -0.65 V Base-Emitter Saturation Voltage VBE(sat) IC =-100mA , IB=-5mA -1.1 V Transition Frequency fT VCE=-5V , IC=-10mA f=100MHZ Collector Capacitance Cob VCB =-10V , f=1MHZ Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain BC856AW,857AW,858AW BC856BW,857BW,858BW BC857CW,858CW Company reserves the right to improve product design , functions and reliability without notice. -15 125 220 420 nA 250 475 800 100 MHZ 4.5 pF REV:B Page 2 QW-BTR36 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G) Fig.1- DC current gain as a function fo collector current ;typical values. Fig.2- Base-Emitter Voltage as a function of collector current;typical values -1200 500 BC857AW;VCE= -5V -1000 400 -800 hFE VBE (mV) Tamb=150°C 300 °C =-55 Tamb -600 b=2 Tam 5°C 200 -400 Tamb=25°C b=1 Tam 100 C 50 ° -200 Tamb=-55°C BC857AW;VCE= -5V 0 -10-2 -10-1 -10 -1 -102 0 -10-2 3 -10 -10-1 -102 3 -10 IC (mA) IC (mA) Fig.3- Collector-emitter saturation voltage as a function of collector current; typical values. -104 -10 -1 Fig.4- Base-emitter saturation voltage as a function of collector current; typical values -1200 BC857AW;IC/IB= 20 -1000 -103 VBEsat (mV) VCEsat (mV) Tamb=150°C °C =-55 -800 Tamb °C =150 Tamb -400 -102 C =25° Tamb -600 -200 Tamb=25°C BC857AW;IC/IB= 20 Tamb=-55°C -10 -10-1 2 -10 -1 0 -10-1 3 -10 -10 2 -10 -1 IC (mA) -10 3 -10 IC (mA) Fig.5- DC current gain as a function fo collector current ;typical values. Fig.6- Base-emitter voltage as a function of collector current;typical values. -1200 1000 BC857BW;VCE= -5V -1000 800 Tamb=150°C VBE (mV) -800 hFE 600 °C =-55 Tamb -600 b Tam °C =2 5 400 Tamb=25°C -400 Tam 200 b=1 C 5 0° -200 Tamb=-55°C 0 -10-2 -10-1 -1 BC857BW;VCE=-5V -10 -102 3 -10 0 -10-2 -10-1 -1 -10 -102 3 -10 IC (mA) IC (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3 QW-BTR36 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G) Fig.7- Collector-ernitter saturation voltage as a function of collector current typical values. -104 Fig.8- Base-Emitter Saturation Voltage as a function of collector current;typical values -1200 BC857BW;IC/IB= 20 -1000 -103 VBEsat (mV) VCEsat (mV) Tamb=150°C °C =-55 -800 Tamb C =25° Tamb -600 °C =150 Tamb -400 -102 -200 Tamb=25°C BC857BW;IC/IB= 20 Tamb=-55°C -10 -10-1 -1 2 -10 0 -10-1 3 -10 -10 2 -10 -1 3 -10 -10 IC (mA) IC (mA) Fig.9- DC current gain as a function fo collector current ;typical values. Fig.10- Base-Emitter Voltage as a function of collector current;typical values -1200 1000 BC857CW;VCE= -5V -1000 Tam b 800 =150 °C -800 °C =-55 Tamb VBE (mV) hFE 600 -600 b Tam °C =25 400 -400 Tamb=25°C b =1 Tam Tamb=-55°C 200 C 5 0° -200 BC857CW;VCE= -5V 0 -10-2 -10-1 -102 -10 -1 0 -10-2 3 -10 -10-1 -102 3 -10 IC (mA) IC (mA) Fig.11- Collector-ernitter saturation voltage as a function of collector current; typical values. -104 -10 -1 Fig.12- Base-Emitter Saturation Voltage as a function of collector current;typical values -1200 BC857CW;IC/IB= 20 -1000 -103 Tamb=150°C VBEsat (mV) VCEsat (mV) -102 Tamb=25°C °C =-55 -800 Tamb C =25° Tamb -600 °C =150 Tamb -400 -200 Tamb=-55°C -10 -10-1 -1 -10 BC857CW;IC/IB= 20 2 -10 3 -10 0 -10-1 IC (mA) -1 -10 2 -10 3 -10 IC (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-BTR36 Comchip Technology CO., LTD. Small Signal Transistor Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-323 SOT-323 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.10 2.55 ± 0.10 1.19 ± 0.10 1.55 + 0.10 178 ± 1.00 54.40 ± 0.40 13.0 ± 0.20 (inch) 0.089 ± 0.004 0.100 ± 0.004 0.047 ± 0.004 0.061 + 0.004 7.008 ± 0.039 2.142 ± 0.016 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5 QW-BTR36 Comchip Technology CO., LTD. Small Signal Transistor Marking Code 3 Marking Code Part Number BC856AW-G 3A BC857AW-G 3E BC858AW-G 3J BC856BW-G 3B BC857BW-G 3F BC858BW-G 3K BC857CW-G 3G BC858CW-G 3L XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-323 A SIZE (mm) (inch) A 0.80 0.031 B 1.30 0.051 C 1.94 0.076 D 2.74 0.108 C D B Standard Packaging REEL PACK Case Type SOT-323 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 6 QW-BTR36 Comchip Technology CO., LTD.