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CDBB2100

CDBB2100

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBB2100 - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBB2100 数据手册
SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw C DBB220 Thru CDBB2100 R everse Voltage: 20 - 100 Volts Forward Current: 2.0 Amp F eatures I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.012(0.31) 0.006(0.15) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max.Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction temperature Storage Temperature R R JA JL Symbol V RRM V DC V RMS I FSM CDBB220 CDBB240 CDBB260 CDBB2100 Unit V V V A 20 20 14 40 40 28 60 60 42 100 100 70 50 Io VF IR 20 0.50 2.0 0.70 0.85 A V mA 10 0 .5 75 17 -50 to +125 -65 to +150 C/W C C Tj T STG N ote 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas M DS0208010B Page 1 SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curevs (CDBB220 Thru CDBB2100) Fig. 1 - Reverse Characteristics 100 100 F ig.2 - Forward Characteristics CDBB220-240 CDBB260 R everse Current ( mA ) 10 Forward Current ( A ) 10 CDBB280-2100 1 Tj=75 C 1 0.1 0.1 Tj=25 C 0.01 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0 20 40 60 80 100 120 140 160 180 200 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage (V) 1.9 2.1 Percent of Rated PeakReverse Voltage (%) Fig. 3 - Junction Capacitance 3 50 Fig. 4 - Current Derating Curve J unction Capacitance (pF) 250 200 150 100 50 0 0.01 0.1 1.0 10 100 Average forward Current ( A ) 300 = 1MHz and applied 4VDC reverse voltage 2.4 2.0 CD 1.6 1.2 0.8 0.4 0 20 40 60 80 BB Reverse Voltage (V) Ambient Temperature ( C) CD 100 26 BB 22 024 0 021 00 120 140 160 Fig. 5 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 0 1 5 10 50 1 00 N umber of Cycles at 60Hz M DS0208010B Page 2
CDBB2100 价格&库存

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