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CDBDSC51200-G

CDBDSC51200-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    TO-252

  • 描述:

    DIODE SIC 5A 1200V TO-252/DPAK

  • 数据手册
  • 价格&库存
CDBDSC51200-G 数据手册
Silicon Carbide Power Schottky Diode CDBDSC51200-G Reverse Voltage: 1200 V Forward Current: 5 A RoHS Device D-PAK(TO-252) 0.098(2.50) 0.083(2.10) 0.268(6.80) 0.248(6.30) Features 0.217(5.50) 0.024(0.60) 0.016(0.40) 0.201(5.10) - Rated to 1200V at 5 Amps 4 - Zero reverse recovery current 0.244(6.20) 0.213(5.40) - Zero forward recovery voltage - Temperature independent switching behaviour. 1 - High temperature operation. 2 3 0.126(3.20) 0.094(2.40) - High frequency operation. 0.039(1.00) 0.020(0.50) 0.090(2.29) 0.016(0.40) 0.187(4.74) 0.171(4.34) Mechanical data - Case: TO-252/D-PAK, molded plastic. 0.024(0.60) 0.016(0.40) Dimensions in inches and (millimeters) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram C(3) C(1) (2) A Maximum Ratings (at TA=25°C, unless otherwise noted) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage Tj = 25°C VRRM 1200 V Surge peak reverse voltage Tj = 25°C VRSM 1200 V DC bolcking voltage Tj = 25°C VDC 1200 V Continuous forward current Tj = 25°C Tj = 135°C Tj = 158°C IF 8.5 5 A Repetitive peak forward surge cruuent Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 25 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 50 A Power dissipation Operating junction temperature range Storage temperature range 109.5 TC = 25°C TC = 110°C Typical thermal resistance 18 Junction to case PTOT 47 W RθJC 1.37 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-BSC01 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 5A, Tj = 25°C Forward voltage VR = 1200V, Tj = 25°C IR VR = 1200V, Tj = 175°C VR = 800V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge Typ. VF IF = 5A, Tj = 175°C Reverse current Min. QC VR Unit Max. 1.45 1.7 2.05 2.5 20 100 50 200 V μA nC 36 0 475 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 400V, Tj = 25°C, f = 1MHZ C VR = 800V, Tj=25°C, f=1MHZ 510 34 44 33 40 pF RATING AND CHARACTERISTIC CURVES (CDBDSC51200-G) Fig.2 - Reverse Characteristics 0.035 °C =1 2 TJ =1 75 TJ 5 Reverse Current, IR (uA) 5° C 7 5° C 6 TJ= 2 5° C 0.04 TJ= Forward Current, IF (A) Fig.1 - Forward Characteristics 7 4 3 2 1 TJ=175°C =25°C 0.025 TJ=125°C 0.02 TJ=75°C 0.015 TJ=25°C 0.01 0.005 0 0 0 0.5 1.0 1.5 2.0 2.5 Capacitance Between Terminals, CJ (pF) 10 30 30 % % Du ty Duty 20 70% Duty D.C. 0 50 1500 Fig.4 - Capacitance Characteristics 40 25 1000 Fig.3 - Current Derating 50 50% Duty 500 Reverse Voltage, VR (V) 60 10 0 Forward Voltage, VF (V) 70 Forward Current, IF (A) 0.03 75 100 125 150 175 500 400 300 200 100 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BSC01 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Reel Taping Specification d P0 P1 E Index hole F B P W C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 160mm (min) Start 400mm (min) Direction of Feed TO-252/D-PAK TO-252/D-PAK SYMBOL A B C d D D1 D2 (mm) 6.96 ± 0.10 10.49 ± 0.10 2.79 ± 0.10 1.55 ± 0.05 330.00 ± 2.00 76.50 + 2.00 - 0.00 13.30 ± 1.00 (inch) 0.274 ± 0.004 0.413 ± 0.004 0.110 ± 0.004 0.061 ± 0.002 12.992 ± 0.079 3.012 + 0.079 - 0.00 0.524 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 7.50 ± 0.10 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 16.00 ± 0.20 21.00 Max. (inch) 0.069 ± 0.004 0.295 ± 0.004 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.630 ± 0.008 0.827 Max. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC01 Page 3 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Marking Code Part Number Marking Code CDBDSC51200-G ESIC05120SD ESIC05120SD Suggested PAD Layout TO-252 / DPAK SIZE (mm) (inch) A 4.57 0.180 B 1.20 0.047 C 5.80 0.228 D 5.85 0.230 E 2.00 0.079 D E A C B Standard Packaging REEL PACK Case Type TO-252/D-PAK REEL REEL SIZE ( pcs ) (inch) 2,500 13 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC01 Page 4 Comchip Technology CO., LTD.
CDBDSC51200-G 价格&库存

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CDBDSC51200-G
    •  国内价格
    • 1+18.65497

    库存:240