CDBJFSC101200-G

Silicon Carbide Power Schottky Diode CDBJFSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device TO-220F Features - Rated to 1200V at 10 Amps 0.404(10.25) 0.388( 9.85) - Short recovery time. - High speed switching possible. 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.264(6.70) 0.248(6.30) - High frequency operation. 0.602(15.30) 0.587(14.90) - High temperature operation. - Temperature independent switching behaviour. 0.185(4.70) 0.173(4.40) 0.039(1.00) 0.024(0.60) - Positive temperature coefficient on VF. 0.154(3.90) 0.130(3.30) 0.055(1.40) 0.043(1.10) Circuit diagram 0.539(13.70) 0.516(13.10) 0.031(0.80) 0.020(0.50) 0.031(0.80) 0.020(0.50) K(3) 0.110(2.80) 0.098(2.50) 0.100(2.55) 0.201(5.10) Dimensions in inches and (millimeter) K(1) A(2) Maximum Rating (at TA=25°C unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 V DC blocking voltage VDC 1200 V IF 10 A Parameter Conditions Typical continuous forward current TC = 100°C Repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 50 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave IFSM 100 A Power dissipation Tc = 25°C 51 PTOT Typical thermal resistance Operating junction temperature range Storage temperature range Junction to case W 22.1 Tc = 110°C RθJC 2.94 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BSC14 Page 1 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Symbol Conditions IF = 10 A , TJ = 25°C Forward voltage Typ Max 1.63 1.7 Unit VF V IF = 10 A , TJ = 175°C 2.55 VR = 1200V , TJ = 25°C 50 Reverse current 100 µA IR VR = 1200V , TJ = 175°C 100 VR = 800V , TJ = 150°C Total capacitive charge VR QC = ∫ C(V) dv 0 Total capacitance - QC 69 C 780 VR = 0V , TJ = 25°C , f = 1 MHZ nC pF Typical Characteristics (CDBJFSC101200-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 0.08 10 Reverse Current, IR (mA) Forward Current, IF (A) 0.07 8 TJ=25°C 6 TJ=75°C TJ=125°C 4 TJ=175°C 2 0.06 0.05 TJ=75°C 0.04 TJ=125°C 0.03 TJ=175°C 0.02 TJ=25°C 0.01 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 800 1000 1200 1400 1600 Fig.4 - Capacitance vs. Reverse Voltage Capacitance Between Terminals, CJ (pF) Forward Current, IF (A) 600 Fig.3 - Current Derating 50 40 10% Duty 30 30% Duty 50% Duty 20 70% Duty 50 400 Reverse Voltage, VR (V) 60 0 25 200 Forward Voltage, VF (V) 70 10 0 D.C. 75 100 150 125 175 1000 900 800 700 600 500 400 300 200 100 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BSC14 Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Marking Code Part Number Marking Code CDBJFC101200-G JFSC101200 C JFSC101200 Standard Packaging TUBE PACK Case Type TO-220F TUBE BOX ( pcs ) ( pcs ) 50 1,000 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-BSC14 Comchip Technology CO., LTD.