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CDBM2100

CDBM2100

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CDBM2100 - SMD Schottky Barrier Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CDBM2100 数据手册
S MD Schottky Barrier Rectifier SMD COMCHIP www.comchip.com.tw C DBM220 Thru CDBM2100 R everse Voltage: 20 - 100 Volts Forward Current: 2.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical data C ase: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.04 gram 0.110(2.80) 0.094(2.40) 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Typical. Thermal Resistance (Note 1) R R Operating Junction Temperature Storage Temperature Tj T STG JA JL Symbol V RRM V DC V RMS I FSM CDBM220 CDBM240 CDBM260 CDBM280 CDBM2100 Unit V V V A 20 20 14 40 40 28 60 60 42 80 80 56 100 100 70 50 Io VF IR 10 0.50 2.0 0.70 0.85 A V mA 5 0 .5 85 20 -55 to +125 -55 to +150 -55 to +150 C /W C C N ote 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas M DS0211020A Page 1 S MD Schottky Barrier Rectifier SMD COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CDBM220 Thru CDBM2100) Fig. 1 - Reverse Characteristics 100 100 F ig.2 - Forward Characteristics R everse Current ( mA ) Forward Current ( A ) 24 0 22 26 B M C D CD BM 28 0- 10 10 0- 0 21 00 1 Tj=75 C 1 0.1 0.1 Tj=25 C 0.01 0.01 0 20 40 60 80 100 120 140 160 180 200 0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage (V) CD BM 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 7 00 600 500 400 300 200 100 0 = 1MHz and applied 4VDC reverse voltage Fig. 4 - Current Derating Curve J unction Capacitance (pF) 2.4 Average forward current ( A ) 2.0 CD 1.6 1.2 0.8 0.4 0 BM CD BM 22 024 0 26 021 00 0.01 0.1 1.0 10 100 20 40 60 80 100 120 140 160 Reverse Voltage (V) Ambient Temperature ( C) Fig. 5 - Non repetitive Forward Surge Current Peak surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 0 1 5 10 50 1 00 N umber of Cycles at 60Hz M DS0211020A Page 2
CDBM2100 价格&库存

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