CEFB103

SMD Efficient Fast Recovery Rectifier COMCHIP w ww.comchip.com.tw C EFB101 Thru CEFB105 R everse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2.13) 0.012(0.31) 0.006(0.15) C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CEFB 101 50 50 35 CEFB 102 100 100 70 CEFB 103 200 200 140 CEFB 104 400 400 280 CEFB 105 600 600 420 Unit V V V A 30 Io VF Trr IR R 0.875 25 1.0 1.1 35 1.25 50 A V nS uA 5 .0 250 13 -55 to +150 -55 to +150 JL C /W C C Tj T STG N ote 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. M DS0208004C Page 1 SMD Efficient Fast Recovery Rectifier S MD COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CEFB101 Thru CEFB105) Fig. 1 - Reverse Characteristics 1 00 10 F ig.2 - Forward Characteristics CEFB101-103 R everse Current ( uA ) Tj=125 C 10 Forward current ( A ) 1.0 CEFB104 1.0 Tj=75 C 0.1 CEFB105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 Tj=25 C 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V) P ercent of Rated Peak Reverse Voltage (%) F ig. 3 - Junction Capacitance 35 30 Fig. 4 - Non Repetitive Forward Surge Current P eak Surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode f=1MHz and applied 4VDC reverse voltage Tj=25 C J unction Capacitance (pF) 40 25 20 30 Tj=25 C 20 CEFB101-103 15 10 5 0 CEFB104-105 10 0 0.01 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) N umber of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.8 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A S ingle Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0208004C Page 2