2N3583

NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ratings Collector-Base Voltage (IE= 0) 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 tp = 10ms @ Tmb = 70°C Value 250 330 440 175 250 300 6 1 2 2 5 1 35 200 -65 to +200 Unit V Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Peak Collector Current Base current Total power Dissipation Junction Temperature Storage Temperature V V A A A Watts °C °C IC ICM IB PT TJ TStg THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to ambient in free air Value 5 87.5 Unit °C/W COMSET SEMICONDUCTORS 1 NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter cut-off current Test Condition(s) 2N3583 IB = 0 ; VCE = 150 V VBE = -1.5V ; VCE = 225 V VBE = -1.5V ; VCE = 340 V VBE = -1.5V ; VCE = 450 V VBE = -1.5V ; VCE = 225 V Tj= 150°C VBE = -1.5V ; VCE = 300 V Tj= 150°C IC = 0 ; VEB = 6 V Min Typ Mx Unit - ICEO 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 10 5 5 1 mA ICEX Collector-Emitter cut-off current 175 250 300 40 10 25 25 8 8 350 - 3 5 0.5 0.5 5 0.75 0.75 1.4 200 100 100 80 80 mA IEBO VCEO(SUS) VCE(SAT) VBE(SAT) Emitter cut-offcurrent Collector-Emitter sustaning Voltage (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IB = 0 ; IC = 200 mA V IC = 1 A ; IB = 125 mA V IC = 1 A ; IB = 100 mA VCE = 10 V ; IC = 500 mA hFE DC Current Gain (1) VCE = 10 V ; IC = 1 A VCE = 2 V ; IC = 1 A IS/B fT td+tr tf ts Second Breakdown Collector current Transition frequency Turn-on-time Fall time Carrier storage time VCE = 100 V ; t = 1 s VCE = 10 V ; IC = 200 mA f = 5 MHz IC = 1 A ; IB = 100 mA IC = 1 A ; IB = 100 mA IC = 1 A ; IB = 100 mA 10 - - 3 3 4 MHz µs 1. Measured under pulse conditions :tP