BD131

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ratings Value 45 45 4 Unit V V V Symbol IC IB PT TJ TStg Collector Current Ratings -I C -ICM -IBM +IBM @ Tmb = 60°C Value 3 6 0.5 0.5 Unit A A Watts °C °C Base current (peak value) Reverse base current (peak value) Total power Dissipation 15 150 -65 to +150 Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to mouting base Value 6 Unit K/W COMSET SEMICONDUCTORS 1 PNP BD132 NPN BD131 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO -IEBO -VCE(SAT) -VBE(SAT) hFE Ratings Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) IE=0 , -VCB=40 V IE=0 , -VCB=40 V ,Tj= 150°C IC=0, -VEB=3 V -IC=0.5 A, -IB=50 mA -IC=2.0 A, -IB=200 mA -IC=0.5 A, -IB=50 mA -IC=2.0 A, -IB=200 mA -VCE=12 V, -IC=500m A -VCE=1 V, -IC=2 A Min Typ Mx Unit 40 20 5 500 5 0.3 1.2 0.7 1,5 µA µA V V DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 MECHANICAL DATA CASE TO-126 COMSET SEMICONDUCTORS 2