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BD680

BD680

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BD680 - SILICON DARLINGTON POWER TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BD680 数据手册
PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 SILICON DARLINGTON POWER TRANSISTORS The BD676-BD678-BD680-BD682 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD675-BD677-BD679-BD681 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO Collector-Emitter Voltage Ratings BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 -IC -ICM -IBM @ Tmb = 25°C Value 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 Unit V -VCBO -VEBO Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature V V A A Watts °C °C -I C -I B PT TJ TStg THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1 PNP BD676-BD678-BD680-BD682 NPN BD675-BD677-BD679-BD681 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= -VCBOMAX=45 V IE=0 , -VCB= -VCBOMAX=60 V IE=0 , -VCB= -VCBOMAX=80 V IE=0 , -VCB= -VCBOMAX=100 V IE=0 , -VCB= -½VCBOMAX= 45V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 60V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 80V,Tj= 150°C IE=0 , -VCB= -½VCBOMAX= 100V,Tj= 150°C IB=0 , -VCE= -½VCEOMAX=60 V IC=0, -VEB=5 V -IC=1.5 A, -IB=6 mA -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 BD676 BD678 BD680 BD682 Min Typ 750 10 0,8 2200 650 60 1,5 0,3 1,5 M Unit x 0,2 0,2 0,2 0,2 1 1 1 1 0,2 0,2 0,2 0,2 5 2,5 2,5 1.5 5 mA -ICBO Collector cut-off current -ICEO -IEBO -VCE(SAT) hFE -VBE hfe fhfe VF Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain mA mA V Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP
BD680 价格&库存

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