BD683

NPN BD683 PNP BD684 SILICON DARLINGTON POWER TRANSISTORS The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complement is BD684. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature Ratings Value 120 140 5 IC ICM IBM @ Tmb = 25°C 4 6 0.1 Unit V V V A A Watts °C °C IC IB PT TJ TStg 40 150 -65 to +150 THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 NPN BD683 PNP BD684 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) ton toff Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain Test Condition(s) IE=0 , VCB= VCEOMAX=120 V IE=0 , VCB= 1/2VCBOMAX= 70V,Tj= 150°C IB=0 , VCE= 1/2VCEOMAX=60 V IC=0, VEB=5 V IC=1.5 A, IB=6 mA Min Typ 750 10 0,8 2200 1500 60 0,8 4,5 Max 0,2 1 0,2 5 2,5 2,5 2 8 Unit mA mA mA V VCE=3 V, IC=500 mA VCE=3 V, IC=1,5 A VCE=3 V, IC=4 A VCE=3 V, IC=1,5 A Base-Emitter Voltage(1&2) VCE=3 V, IC=1,5 A, f= 1 MHz Small signal current gain VCE=3 V, IC=1,5 A Ut-off frequency IF=1,5 A Diode forward voltage Second-breakdown collector VCE=50 V, tP= 20ms,non rep., without heatsink current V kHz A µs Turn-on time Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time 1. Measured under pulse conditions :tP