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BDX18

BDX18

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BDX18 - PNP SILICON TRANSISTOR EPITAXIAL BASE - Comset Semiconductor

  • 数据手册
  • 价格&库存
BDX18 数据手册
BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VEBO VCBO VCEX IC IB PT TJ TS Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° VBE=+1.5 V RBE=100Ω Ratings BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N Value -60 -70 -65 -7 -100 -70 -90 -70 -15 -7 Unit V V V V V A A Watts °C 117 -65 to +200 COMSET SEMICONDUCTORS 1/3 BDX18 – BDX18N THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=200 mA, IB=0 Min Typ Mx Unit -60 -60 -90 -70 -70 -65 - BDX18 BDX18N BDX18 4 - V VCEX(SUS) IC=-100 mA, VBE=1.5 V V BDX18N BDX18 -5 -10 -5 -10 -5 -1.8 -1.1 mA V V MHz mA V VCER(SUS) Collector-Emitter Breakdown Voltage (*) IC=-200 mA, RBE=100 Ω VCE=-90 V, VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C VCE=-70 V, VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N ICEX Collector-Emitter Cutoff Current IEBO VBE VCE(SAT) fT Emitter-Base Cutoff Current VEB=-7 V Base-Emitter Voltage (*) IC=-4.0 A, VCE=-4.0V Collector-Emitter Saturation IC=-4.0 A, IB=-0.4V Voltage Transition Frequency IC =-1A, VCE=-10 V, f=1 MHz COMSET SEMICONDUCTORS 2/3 BDX18 – BDX18N Symbol Ratings Static Forward Current Transfer Ratio (*) Test Condition(s) Min Typ Mx Unit h21E VCE=-4.0 V, IC=-4.0 A BDX18 BDX18N 20 - 70 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3
BDX18 价格&库存

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