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BDX36

BDX36

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BDX36 - SILICON PLANAR EPITAXIAL POWER TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BDX36 数据手册
NPN BDX35 – BDX36 – BDX37 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BDX35, BDX36 and BDX37 are NPN transistors mounted in Jedec TO-126 plastic package. They are intented for use in high current switching applications and switching regulator circuits ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 Value 60 60 80 100 120 120 100 120 120 5 Unit V VCBO Collector-Base Voltage Collector-Emitter (VBE=0) Emitter-Base Voltage Voltage V VCES V VEBO V Symbol Ratings IC(RMS) BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 Value 5 Unit IC Collector Current A 10 ICM IB IB Base current 1 A 2 IBM PT Power Dissipation @ Tmb = 75° 15 Watts W/°C TJ TStg Junction Temperature 150 -65 to +150 °C °C Storage Temperature * COMSET SEMICONDUCTORS 1 NPN BDX35 – BDX36 – BDX37 THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings BDX35 Thermal Resistance, Junction to mouting BDX36 base BDX37 BDX35 Thermal Resistance, Junction to ambient BDX36 infree air BDX37 Value 5 Unit K/W RthJ-a 100 K/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB=80 V IE=0 , VCB=100 V IE=0 , VCB=100 V IE=0 , VCB=80 V , Tj = 100°C IE=0 , VCB=100 V,Tj = 100°C IE=0 , VCB=100 V,Tj = 100°C IC=0, VEB=4 V Min Typ Mx Unit 45 ICBO Collector cut-off current IEBO Emitter cut-offcurrent IC=0, VEB=5 V BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX36 BDX35 BDX36 BDX37 BDX35 BDX37 BDX36 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 130 10 10 10 50 50 50 10 10 10 1 1 1 0,9 0,7 0,9 1,2 1,2 1,5 1 ,6 2,0 2,0 2,5 450 - µA µA mA IC=5.0 A, IB=500 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=7.0 A, IB=700 mA IC=10 A, IB=1A V VBE(SAT) Base-Emitter saturation Voltage (*) IC=5.0 A, IB=500 mA IC=7.0 A, IB=700 mA IC=10 A, IB=1A V hFE DC Current Gain (*) VCE=10 V, IC=500m A - 80 * COMSET SEMICONDUCTORS 2 NPN BDX35 – BDX36 – BDX37 MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 * COMSET SEMICONDUCTORS 3 NPN BDX35 – BDX36 – BDX37 * COMSET SEMICONDUCTORS 4
BDX36 价格&库存

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