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BDX43

BDX43

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BDX43 - SILICON PLANAR DARLINGTON TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BDX43 数据手册
NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 SILICON PLANAR DARLINGTON TRANSISTORS The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary PNP types are the BDX45, BDX46 and BDX47 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 Value 60 80 90 45 60 80 5 Unit V VCER Collector-EmitterVoltage V VEBO Emitter-Base Voltage V IC IC Collector Current ICM IB PT TJ TS Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 1 A 2 0.1 A Watts 1.25 150 °C -65 to +150 COMSET SEMICONDUCTORS 1/3 NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings BDX42 Thermal Resistance, Junction to Ambient BDX43 BDX44 BDX42 Thermal Resistance, Junction to BDX43 Mounting base BDX44 Value 100 Unit K/W 10 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES IEBO Ratings Collector cut-off current Test Condition(s) VBE = 0 ; VCE = 45V VBE = 0 ; VCE = 60V VBE = 0 ; VCE = 80V IC =0 ; VEB = 4V Min Typ Mx Unit 1000 1000 1000 2000 2000 2000 Emitter cut-off current BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 2/3 - 10 10 10 10 10 10 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 1.8 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 - µA µA IC=500 m A, IB=0.5 mA IC=1.0 A, IB=1.0 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=1.0 A, IB=4.0 mA IC=500 m A, IB=0.5 mA Tj=150 °C IC=1.0 A, IB=1.0 mA Tj=150 °C IC=1.0 A, IB=4.0 mA Tj=150 °C IC=500 m A, IB=0.5 mA V VBE(SAT) Base-Emitter saturation Voltage (*) IC=1.0 A, IB=1.0 mA IC=1.0 A, IB=4.0 mA VCE=10 V, IC=150 mA V hFE DC Current Gain VCE=10 V, IC=500 mA - COMSET SEMICONDUCTORS NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 Symbol Ratings Test Condition(s) BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 Min Typ - Mx Unit - hfe ton toff ton toff Small Signal Current Gain VCE=5.0 V, IC=500 mA , f=35MHz Turn-on time IC=500 mA, IBon= -IBoff=0.5 mA Turn-off time Turn-on time IC=1 A, IBon= -IBoff=1.0 mA Turn-off time - 10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500 - ns ns MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 COMSET SEMICONDUCTORS 3/3
BDX43 价格&库存

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