BFY90

BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VCBO VEBO IC ICM Ptot Tstg, Tj Ratings Collector-Emitter Voltage ( IB = 0) Collector-Emitter Voltage ( RBE ≤50Ω ) Collector-Base Voltage ( IE= 0) Collector-Base Voltage ( IC = 0) Collector Current Collector Peak Current Total Power Dissipation at Tamb ≤ 25 °C Storage and Junction Temperature Value 15 30 30 2.5 25 50 200 -65 to 200 Unit V V V V mA mA mW °C COMSET SEMICONDUCTORS 1/4 BFX89 BFY90 THERMAL CHARACTERISTICS Symbol RthJ-C RthJ- Ratings Thermal Resistance, Junction – Case Thermal Resistance, Junction – ambient Max Max Value 580 880 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Tamb = 25°C unless otherwise specified Symbol ICBO VCEK* Ratings Collector Cutoff Current (IE=0) Collector-emitter Knee Voltage Test Condition(s) Min Typ 1 1.1 1.2 1.4 0.6 0.6 Mx Unit 10 0.75 GHz 150 150 125 125 1.7 pF 1.5 pF 0.8 nA V VCB = 15V IC = 20mA VCE = 5V f = 500MHZ IC =2 mA VCE = 5V f = 500MHZ IC =25 mA IC= 2mA VCE= 1 V BFX89 BFY90 BFX89 BFY90 BFX89 BFY90 1 1.3 20 25 20 25 - fT Transition Frequency hFE DC Current Gain IC= 25mA VCE= 1 V IE =0 VCB = 10V Collector-base Capacitance f= 1MHZ VCE= 5 Reverse Capacitance IC= 2mAV f = 1MHZ BFX89 BFY90 BFX89 BFY90 BFX89 BFY90 CCBO(1) Cre(2) COMSET SEMICONDUCTORS 2/4 BFX89 BFY90 Symbol Ratings Test Condition(s) IC= 2mA , VCE= 5 V f = 100KHz Rg = Optimized IC= 2mA , VCE= 5 V f= 200 MHz Rg = Optimized Min Typ Mx Unit BFY90 Only BFX89 BFY90 BFX89 BFY90 BFX89 BFY90 f=200 MHz f=800 MHz f=200 MHz f=800 MHz (3) Channel 9 (4) Channel 62 (3) Channel 9 (4) Channel 62 19 21 10 - 3.3 2.5 7 5.5 22 7 23 8 6 6 4 4 3.5 6.5 5 dB dB NF(2) Noise Figure IC= 2mA , VCE= 5 V f = 500 MHz Rg = 50 Ω IC= 2mA , VCE= 5 V f = 800 MHz Rg = Optimized For BFX89 IC= 8mA VCE= 10 V For BFY90 IC= 14mA VCE= 10 V For BFX89 IC=8mA VCE= 10 V Dim = -30 dB For BFY90 IC=14mA VCE= 10 V Dim = -30 dB Gpe (2) Power Gain ( not neutralized) Po Output Power mW 12 12 - * IB = value for which IC =22 mA at VCE = 1V (1) Shield lead not grounded (3) fp = 202MHZ, fq = 205 MHZ, f(2q-p) = 208MHZ (2) Shield lead grounded (4) fp = 798MHZ, fq = 802 MHZ, f(2q-p) = 806MHZ COMSET SEMICONDUCTORS 3/4 BFX89 BFY90 MECHANICAL DATA CASE TO-72 Pin 1 : Pin 2 : Pin 3 : Pin 4 : Emitter Base Collector Case COMSET SEMICONDUCTORS 4/4