BUX40

NPN BUX40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX VCER IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V RBE = 100Ω tp = 10ms @ TC = 25° Value 125 160 7 160 150 20 28 4 120 200 -65 to +200 Unit V V V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.46 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC=200 mA Test Condition(s) Min Typ Mx Unit 125 7 1 1 5 1 V V mA mA mA IC=0A , IE=50 mA VCE=100 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 COMSET SEMICONDUCTORS 1/2 NPN BUX40 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=10 A , VCE=4.0 V IC=15 A , VCE=4.0 V IC=10 A , IB=1 A IC=15 A , IB=1.88 A IC=15 A , IB=1.88 A 15 8 - 0.6 0.9 1.7 45 1.2 1.6 2 - V Symbol IS/B ES/B fT ton ts tf Ratings Second breakdown collector current Clamped ES/B Collector current Transition frequency Turn-on time Storage time File time Test Condition(s)Sec VCE=30 V , ts = 1s VCE=50 V , ts = 1s Vclamp=125 V , L=500 µH VCE=15 V , IC=1 A , f=10 MHz IC=15 A , IB=1.88 A , VCC=30 V Min Typ Mx Unit 4 1 15 8 0.35 0.85 0.14 1.2 1 0.4 µs A A MHz IC=15 A , VCC=30 V IB1 = -IB2 =1.88 A (1) Pulse Duration = 300 µs, Duty Cycle