BUX80

NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in converters, inverters, switching regulators and motor control systems applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VEBO VCES IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 RBE = 50Ω IC = 0 VBE = 0 tp = 10ms @ TC = 40° Value 400 500 10 800 10 15 5 100 150 -65 to +150 Unit V V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.1 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCER IEBO ICES Ratings Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Emitter Cutoff Current Collector Cutoff Current IC=100 mA Test Condition(s) Min Typ Mx Unit 400 500 10 1 3 V V mA mA IC=100 mA , RBE = 50Ω VCE=10 V , IC=0 VCE= VCES , VBE= 0 VCE= VCES , VBE= 0, Tcase = 125°C COMSET SEMICONDUCTORS 1/2 NPN BUX80 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=1.2 A , VCE=5.0 V IC=5 A , IB=1 A IC=8 A , IB=2.5 A IC=5 A , IB=1 A IC=8 A , IB=2.5 A - 30 - 1.5 3 1.4 1.8 V Symbol ton ts tf Ratings Turn-on time Storage time File time Test Condition(s)Sec IC=5 A , IB=1 A , VCC=250 V IC=5 A , VCC=250 V IB1 =1A , -IB2 =2 A IC=5 A , VCC=-250 V IB1 =1A , -IB2 =2 A Min Typ Mx Unit 0.5 3.5 0.5 µs (1) Pulse Duration = 300 µs, Duty Cycle