CY7C1378C-250AXI

CY7C1378C 9-Mbit (256K x 32) Pipelined SRAM with NoBL™ Architecture Features • Pin-compatible and functionally equivalent to ZBT® devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 32 common I/O architecture • Single 3.3V power supply (VDD) • Fast clock-to-output times — 2.8 ns (for 250-MHz device) • Clock Enable (CEN) pin to suspend operation • Synchronous self-timed writes • Asynchronous Output Enable (OE) • Available in JEDEC-standard lead-free 100-Pin TQFP package • Burst Capability—linear or interleaved burst order • “ZZ” Sleep mode option Functional Description[1] The CY7C1378C is a 3.3V, 256K x 32 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1378C is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which, when deasserted, suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 2.8 ns (250-MHz device) Write operations are controlled by the four Byte Write Select (BW[A:D]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. In order to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. Logic Block Diagram-CY7C1378C (256K x 32) A0, A1, A MODE CLK CEN ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC ADV/LD C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 C ADV/LD BWA BWB BWC BWD WE WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY S E N S E A M P S O U T P U T R E G I S T E R S D A T A S T E E R I N G O U T P U T B U F F E R S E DQs E INPUT REGISTER 1 E INPUT REGISTER 0 E OE CE1 CE2 CE3 ZZ READ LOGIC SLEEP CONTROL Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05687 Rev. *F • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 14, 2006 CY7C1378C Selection Guide 250 MHz Maximum Access Time (tCO) Maximum Operating Current (IDD) Maximum CMOS Standby Current 2.8 250 40 200 MHz 3.2 220 40 166 MHz 3.5 180 40 Unit ns mA mA Pin Configuration ADV/LD 100-Pin TQFP Pinout BWD BWC BWB BWA CE1 CE2 CE3 VDD CEN CLK VSS WE OE A A NC A 82 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 A NC DQC DQC VDDQ VSS BYTE C DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD BYTE D DQD DQD DQD VSS VDDQ DQD DQD NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA NC BYTE A BYTE B CY7C1378C 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 A MODE VDD VSS NC NC NC NC A1 A0 A A A A A A A A Document #: 38-05687 Rev. *F A A 50 Page 2 of 13 CY7C1378C Pin Definitions Name A0, A1, A TQFP 37, 36, 32, 33, 34, 35, 44, 45, 46, 47, 48, 49, 50, 81, 82, 83, 99, 100 93, 94, 95, 96 88 85 I/O Description InputAddress Inputs used to select one of the 256K address locations. Synchronous Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. BW[A:D] WE ADV/LD InputByte Write Inputs, active LOW. Qualified with WE to conduct Writes to the Synchronous SRAM. Sampled on the rising edge of CLK. InputWrite Enable Input, active LOW. Sampled on the rising edge of CLK if CEN Synchronous is active LOW. This signal must be asserted LOW to initiate a Write sequence. InputAdvance/Load Input. Used to advance the on-chip address counter or load Synchronous a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. Input-Clock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CLK CE1 CE2 CE3 OE 89 98 97 92 86 InputChip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used Synchronous in conjunction with CE2 and CE3 to select/deselect the device. InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used Synchronous in conjunction with CE1 and CE3 to select/deselect the device. InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used Synchronous in conjunction with CE1 and CE2 to select/deselect the device. InputOutput Enable, asynchronous input, active LOW. Combined with the Asynchronous synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. InputClock Enable Input, active LOW. When asserted LOW the Clock signal is Synchronous recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. InputZZ “sleep” Input. This active HIGH input places the device in a non-time Asynchronous critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. I/OBidirectional Data I/O Lines. As inputs, they feed into an on-chip data Synchronous register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[16:0] during the clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQs are placed in a tri-state condition. The outputs are automatically tri-stated during the data portion of a Write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. Input Strap pin Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. Power supply for the I/O circuitry. Ground for the device. CEN 87 ZZ 64 DQs 52, 53, 56, 57, 58, 59, 62, 63, 68, 69, 72, 73, 74, 75, 78, 79, 2, 3, 6, 7, 8, 9, 12, 13, 18, 19, 22, 23, 24, 25, 28, 29 31 MODE VDD VDDQ VSS 15,41,65,91 4, 11, 20, 27, 54, 61, 70, 77 5, 10, 17, 21, 26, 40, 55, 60, 67, 71, 76, 90 Power Supply Power supply inputs to the core of the device. I/O Power Supply Ground Document #: 38-05687 Rev. *F Page 3 of 13 CY7C1378C Pin Definitions (continued) Name NC TQFP 1, 14, 16 30, 38, 39, 42, 43, 51, 66, 80, 84 I/O Description No Connects. Not internally connected to the die. NC (18M, 36M, 72M, 144M, 288M, 576M, 1G) These pins are not connected. They will be used for expansion to the 18M, 36M, 72M, 144M, 288M, 576M, and 1G densities. Burst Read Accesses The CY7C1378C has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the Write signal WE is asserted LOW. The address presented to the address inputs is loaded into the Address Register. The write signals are latched into the Control Logic block. On the subsequent clock rise the data lines are automatically tri-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQs and DQP[A:D]. In addition, the address for the subsequent access (Read/Write/Deselect) is latched into the Address Register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQs (or a subset for Byte Write operations, see Write Cycle Description table for details) inputs is latched into the device and the Write is complete. The data written during the Write operation is controlled by BW[A:D] signals. The CY7C1378C provides Byte Write capability that is described in the Write Cycle Description table. Asserting the Write Enable input (WE) with the selected Byte Write Select (BW[A:D]) input will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte Write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple Byte Write operations. Because the CY7C1378C is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated during the data portion of a Write cycle, regardless of the state of OE. Functional Overview The CY7C1378C is a synchronous-pipelined Burst SRAM designed specifically to eliminate wait states during Write/Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 2.8 ns (250-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a Read or Write operation, depending on the status of the Write Enable (WE). BW[A:D] can be used to conduct Byte Write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus, provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. During the second clock, a subsequent operation (Read/Write/Deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the Chip Enable signals, its output will tri-state following the next clock rise. Document #: 38-05687 Rev. *F Page 4 of 13 CY7C1378C Burst Write Accesses The CY7C1378C has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW[A:D] inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1, A0 00 01 10 11 Second Address A1, A0 01 00 11 10 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 10 01 00 Linear Burst Address Table (MODE = GND) First Address A1, A0 00 01 10 11 Second Address A1, A0 01 10 11 00 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 00 01 10 Cycle Description Truth Table[2, 3, 4, 5, 6, 7, 8] Operation Deselect Cycle Continue Deselect Cycle Read Cycle (Begin Burst) Read Cycle (Continue Burst) NOP/Dummy Read (Begin Burst) Dummy Read (Continue Burst) Write Cycle (Begin Burst) Write Cycle (Continue Burst) NOP/WRITE ABORT (Begin Burst) WRITE ABORT (Continue Burst) IGNORE CLOCK EDGE (Stall) SLEEP MODE Address Used None None External Next External Next External Next None Next Current None CE H X L X L X L X L X X X ZZ L L L L L L L L L L L H ADV/LD L H L H L H L H L H X X WE X X H X H X L X L X X X BWx X X X X X X L L H H X X OE X X L L H H X X X X X X CEN L L L L L L L L L L H X CLK L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H X DQ Tri-State Tri-State Data Out (Q) Data Out (Q) Tri-State Tri-State Data In (D) Data In (D) Tri-State Tri-State Tri-State Notes: 2. X = “Don't Care.” H = HIGH, L = LOW. CE stands for ALL Chip Enables active. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired Byte Write Selects are asserted, see Write Cycle Description table for details. 3. Write is defined by BW[A:D], and WE. See Write Cycle Descriptions table. 4. When a Write cycle is detected, all I/Os are tri-stated, even during Byte Writes. 5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CEN = H, inserts wait states. 7. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:D] = Three-state when OE is inactive or when the device is deselected, and DQs = data when OE is active. Document #: 38-05687 Rev. *F Page 5 of 13 CY7C1378C Write Cycle Description[2, 3] Function Read Write − No bytes written Write Byte A − (DQA) Write Byte B − (DQB) Write Bytes A, B Write Byte C − (DQC) Write Bytes C,A Write Bytes C, B Write Bytes C, B, A Write Byte D − (DQD) Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes WE H L L L L L L L L L L L L L L L L BWD X H H H H H H H H L L L L L L L L BWC X H H H H L L L L H H H H L L L L BWB X H H L L H H L L H H L L H H L L BWA X H L H L H L H L H L H L H L H L ZZ Mode Electrical Characteristics Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description sleep mode standby current Device operation to ZZ ZZ recovery time ZZ Active to sleep current ZZ inactive to exit sleep current Test Conditions ZZ > VDD − 0.2V ZZ > VDD − 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled 0 2tCYC 2tCYC Min. Max. 50 2tCYC Unit mA ns ns ns ns Document #: 38-05687 Rev. *F Page 6 of 13 CY7C1378C Maximum Rating (Above which the useful life may be impaired. For User guide-lines not tested.) Storage Temperature ..................................... −65°C to +150°C Ambient Temperature with Power Applied .................................................. −55°C to +125°C Supply Voltage on VDD Relative to GND .........−0.5V to +4.6V Supply Voltage on VDDQ Relative to GND .......−0.5V to +VDD DC Voltage Applied to Outputs in Tri-State ................................................−0.5V to VDDQ + 0.5V Range Commercial Industrial DC Input Voltage ........................................−0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-Up Current ................................................... > 200 mA Operating Range Ambient Temperature (TA) 0°C to +70°C –40°C to +85°C VDD/VDDQ 3.3V −5%/+10% Electrical Characteristics Over the Operating Range [9, 10] Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage[9] Input LOW Voltage[9] Input Leakage Current except ZZ and MODE Input Current of MODE Input Current of ZZ IOZ IDD for 3.3V I/O for 3.3V I/O, IOH = –4.0 mA for 3.3V I/O, IOL = 8.0 mA for 3.3V I/O for 3.3V I/O GND ≤ VI ≤ VDDQ Input = VSS Input = VDD Input = VSS Input = VDD Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC VDD = Max, Device Deselected, VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f=0 4-ns cycle, 250 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz ISB1 Automatic CE Power-Down Current—TTL Inputs Automatic CE Power-Down Current—CMOS Inputs Automatic CE Power-Down Current—CMOS Inputs Automatic CE Power-Down Current—TTL Inputs 4-ns cycle, 250 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz All speeds −5 −5 30 5 250 220 180 130 120 110 40 2.0 –0.3 −5 −30 5 Test Conditions Min. 3.135 3.135 2.4 0.4 VDD + 0.3V 0.8 5 Max. 3.6 VDD Unit V V V V V V µA µA µA µA µA µA mA mA mA mA mA mA mA ISB2 ISB3 VDD = Max, Device Deselected, or 4-ns cycle, 250 MHz VIN ≤ 0.3V or VIN > VDDQ – 0.3V 5-ns cycle, 200 MHz f = fMAX = 1/tCYC 6-ns cycle, 166 MHz VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 All Speeds 120 110 100 40 mA mA mA mA ISB4 Notes: 9. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2). 10. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05687 Rev. *F Page 7 of 13 CY7C1378C Capacitance[11] Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V, VDDQ = 3.3V 100 TQFP Max. 5 5 5 Unit pF pF pF Thermal Resistance[11] Parameter ΘJA ΘJC Description Test Conditions 100 TQFP Package 29.41 6.13 Unit °C/W °C/W Thermal Resistance Test conditions follow standard test methods and (Junction to Ambient) procedures for measuring thermal impedance, per Thermal Resistance EIA/JESD51 (Junction to Case) AC Test Loads and Waveforms 3.3V I/O Test Load OUTPUT Z0 = 50Ω 3.3V OUTPUT RL = 50Ω 5 pF INCLUDING JIG AND SCOPE R = 351Ω R = 317Ω ALL INPUT PULSES VDD 10% GND ≤ 1 ns 90% 90% 10% ≤ 1 ns VL = 1.5V (a) (b) (c) Note: 11. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05687 Rev. *F Page 8 of 13 CY7C1378C Switching Characteristics Over the Operating Range [12, 13, 14, 15, 16] –250 Parameter tPOWER Clock tCYC tCH tCL Output Times tCO tDOH tCLZ tCHZ tOEV tOELZ tOEHZ Set-up Times tAS tALS tWES tCENS tDS tCES Hold Times tAH tALH tWEH tCENH tDH tCEH Address Hold after CLK Rise ADV/LD Hold after CLK Rise GW, BW[A:D] Hold after CLK Rise CEN Hold after CLK Rise Data Input Hold after CLK Rise Chip Enable Hold after CLK Rise 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up before CLK Rise ADV/LD Set-up before CLK Rise GW, BW[A:D] Set-up before CLK Rise CEN Set-up before CLK Rise Data Input Set-up before CLK Rise Chip Enable Set-up before CLK Rise 1.4 1.4 1.4 1.4 1.4 1.4 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 ns ns ns ns ns ns Data Output Valid after CLK Rise Data Output Hold after CLK Rise Clock to Low-Z [14, 15, 16] –200 Min. 1 5.0 2.0 2.0 2.8 3.2 1.5 1.5 2.8 2.8 1.5 0 2.8 3.2 3.2 3.2 0 1.5 1.5 1.5 Max. Min. 1 6.0 2.4 2.4 –166 Max. Unit ms ns ns ns 3.5 ns ns ns 3.5 3.5 3.5 ns ns ns ns Description VDD (typical) to the First Access Clock Cycle Time Clock HIGH Clock LOW [13] Min. 1 4.0 1.8 1.8 Max. 1.25 1.25 1.25 0 Clock to High-Z[14, 15, 16] OE LOW to Output Valid OE LOW to Output OE HIGH to Output Low-Z[14, 15, 16] High-Z[14, 15, 16] Notes: 12. Test conditions shown in (a), (b) and (c) of AC Test Loads. 13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation can be initiated. 14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve Three-state prior to Low-Z under the same system conditions. 16. This parameter is sampled and not 100% tested. Document #: 38-05687 Rev. *F Page 9 of 13 CY7C1378C Switching Waveforms Read/Write Timing[17, 18, 19] 1 CLK tCENS tCENH 2 t CYC 3 4 5 6 7 8 9 10 tCH tCL CEN tCES tCEH CE ADV/LD WE BW[A:D] ADDRESS tAS A1 tAH A2 tDS tDH A3 A4 tCO tCLZ tDOH A5 tOEV A6 tCHZ A7 Data In-Out (DQ) D(A1) D(A2) D(A2+1) Q(A3) Q(A4) tOEHZ Q(A4+1) D(A5) Q(A6) tDOH OE WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) BURST READ Q(A4+1) WRITE D(A5) tOELZ READ Q(A6) WRITE D(A7) DESELECT DON’T CARE UNDEFINED Notes: 17. For this waveform ZZ is tied LOW. 18. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 19. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document #: 38-05687 Rev. *F Page 10 of 13 CY7C1378C Switching Waveforms (continued) NOP, STALL, and Deselect Cycle[17, 18, 20] 1 CLK CEN CE ADV/LD WE BW[A:D] ADDRESS Data In-Out (DQ) WRITE D(A1) 2 3 4 5 6 7 8 9 10 A1 A2 A3 D(A1) A4 Q(A2) WRITE D(A4) A5 tCHZ Q(A3) STALL NOP D(A4) READ Q(A5) DESELECT Q(A5) CONTINUE DESELECT READ Q(A2) STALL READ Q(A3) DON’T CARE ZZ Mode Timing[21, 22] UNDEFINED CLK t ZZ t ZZREC ZZ t ZZI I SUPPLY I DDZZ t RZZI DESELECT or READ Only ALL INPUTS (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 20. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle. 21. Device must be deselected when entering ZZ mode. See Cycle Description table for all possible signal conditions to deselect the device. 22. I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05687 Rev. *F Page 11 of 13 CY7C1378C Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 166 200 250 Ordering Code CY7C1378C-166AXC CY7C1378C-166AXI CY7C1378C-200AXC CY7C1378C-200AXI CY7C1378C-250AXC CY7C1378C-250AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Package Diagram Part and Package Type Operating Range Commercial Industrial Commercial Industrial Commercial Industrial 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Package Diagram 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 14.00±0.10 100 1 81 80 1.40±0.05 0.30±0.08 22.00±0.20 20.00±0.10 0.65 TYP. 30 31 50 51 12°±1° (8X) SEE DETAIL A 0.20 MAX. 1.60 MAX. 0° MIN. SEATING PLANE 0.25 GAUGE PLANE STAND-OFF 0.05 MIN. 0.15 MAX. NOTE: 1. JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0°-7° R 0.08 MIN. 0.20 MAX. 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL 51-85050-*B A ZBT is a registered trademark of Integrated Device Technology, Inc. No Bus Latency and NoBL are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05687 Rev. *F 0.10 R 0.08 MIN. 0.20 MAX. Page 12 of 13 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1378C Document History Page Document Title: CY7C1378C 9-Mbit (256K x 32) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05687 REV. ** *A ECN NO. Issue Date 286269 323636 See ECN See ECN Orig. of Change PCI PCI Description of Change New data sheet Changed frequency of 225 MHz to 250 MHz Corrected Maximum CMOS Standby Current in Selection Guide from 30 mA 35 mA Added tCYC of 4.0 ns for 250 MHz Changed ΘJA and ΘJC for TQFP Package from 25 and 9 °C/W to 29.41 and 6.13 °C/W respectively Added Industrial Operating Range Replaced Snooze with Sleep in the ZZ Mode Electrical Characteristics and Cycle Description Truth Table Added 3 chip enable for AX package in the ordering information table Shaded 250 MHz speed bin in the AC/DC Table and Selection Guide Added Address Expansion pins in the Pin Definition Table Modified VOL, VOH test conditions Corrected VDDQ from (2.5V – 5% to VDD) to (3.3V – 5% to 3.465) on page# 8 Updated Ordering Information Table Corrected (VDD/VDDQ) range in Operating Range Table from (3.3V – 5% to 3.465) to (3.3V −5%/+10%) Changed ISB2 from 35 to 40 mA Modified test condition in note# 10 from VDDQ < VDD to VDDQ < VDD Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed three state to tri-state Converted from Preliminary to Final Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical Characteristics Table Replaced Package Name column with Package Diagram in the Ordering Information table Updated the ordering information Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND Updated the Ordering Information table. *B 332879 See ECN PCI *C *D *E 346396 377095 408725 See ECN See ECN See ECN PCI PCI RXU *F 501828 See ECN VKN Document #: 38-05687 Rev. *F Page 13 of 13