BTA1300A3

CYStech Electronics Corp. Low VCE(SAT) PNP Epitaxial Planar Transistor Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 1/4 BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. • High DC current gain and excellent hFE linearity. HFE(1)=140—600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A) • Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA). Features Symbol BTA1300A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP Pd Tj Tstg Limits -20 -20 -10 -6 -2 -5 750 150 -55~+150 Unit V V V V A mW °C °C Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%. BTA1300A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -20 -10 -6 140 60 Typ. 120 140 50 Max. -0.1 -0.1 -0.5 -1.5 600 Unit V V V uA uA V V MHz pF Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 2/4 Test Conditions IC=-50uA IC=-10mA IE=-1mA VCB=-20V VEB=-6V IC=-2A, IB=-50mA VCE=-1V, IC=-2A VCE=-1V, IC=-500mA VCE=-1V, IC=-4A VCE=-1V, IE=500mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range Y 140~280 GR 200~400 BL 300~600 BTA1300A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves C urrent Gain vs Collector Current 1000 VCE=1V Saturation Voltage---(mV) Current Gain---HFE 100 1000 Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=40IB 10 100 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) ON Voltage vs Collector Current 1000 Power Dissipation---PD(mW) 800 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 10000 0 Power Derating Curve ON Voltage---(mV) VBE(ON)@VCE=1V 100 Collector Current IC---(mA) 50 100 150 200 Ambient Temperature---TA(℃) BTA1300A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 4/4 A B 1 2 3 α2 Marking: A1300 α3 C D H I E F G α1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1300A3 CYStek Product Specification