BTA1727L3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 1/4 BTA1727L3 Features • High breakdown voltage, BVCEO=-400V • Low saturation voltage • High switching speed. • Complementary to BTD2568L3 • Pb-free package Symbol BTA1727L3 Outline SOT-223 C E B：Base C：Collector E：Emitter C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits -400 -400 -6 -300 -1 -100 5 150 -55~+150 Unit V V V mA A mA W °C °C BTA1727L3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -400 -400 -6 50 90 90 40 Typ. 90 7 Max. -100 -100 -0.3 -0.5 -0.8 -0.95 -0.95 260 260 Unit V V V nA nA V V V V V MHz pF Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 2/4 Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-400V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-50mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCE=-5V, IC=-50mA, f =100MHz VCB=-20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTA1727L3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 10000 VCESAT VCE=10V Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 3/4 Saturation Voltage vs Collector Current Saturation Voltage-(mV) Current Gain--- HFE 1000 IC=30IB 100 100 IC=10IB IC=20IB VCE=5V 10 1 10 100 1000 Collector Current ---IC(mA) 10 1 10 Collector Current ---IC(mA) 100 Saturation Voltage vs Collector Current 10000 6 5 4 3 2 1 100 1 10 100 1000 Collector Current--- IC(mA) 0 0 Power Derating Curve VBESAT@IC=10IB 1000 Power Dissipation---PD(W) Saturation Voltage-(mV) 50 100 150 200 Ambient Temperature---TA(℃) BTA1727L3 CYStek Product Specification CYStech Electronics Corp. SOT-223 Dimension A Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 4/4 Marking: B 1 2 3 C AJ D E F G H a1 I a2 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical DIM A B C D E F Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1727L3 CYStek Product Specification