BTB1132M3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 1/4 BTB1132M3 Features • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 Unit V V V A A W °C °C *1 *2 Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board. BTB1132M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -0.15 150 20 Max. -0.5 -0.5 -0.5 390 30 Unit V V V µA µA V MHz pF Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank Range P 82~180 Q 120~270 R 180~390 BTB1132M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=3V Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain---HFE 100 100 10 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10000 1 0.1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) Saturation Voltage---(mV) VBESAT@IC=10IB 2.5 2 1.5 1 0.5 0 Power Derating Curves See n ote 2 on page 1 1000 100 0.1 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTB1132M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 4/4 Marking: 1 2 C 3 H BK* B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1132M3 CYStek Product Specification