BTB1216J3

CYStech Electronics Corp. Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 PNP Epitaxial Planar High Current (High Performance) Transistor BTB1216J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A • RoHS compliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Symbol BTB1216J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25°C Power Dissipation @TC=25°C Operating and Storage Temperature Range Note: 1.Single pulse, Pw≤10ms BTB1216J3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg Limits -180 -140 -6 -4 -10 (Note 1) -1 1 20 -55 ~ +150 Unit V V V A A A W °C CYStech Electronics Corp. Characteristics (Ta=25°C, unless otherwise specified) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -180 -140 -6 100 150 75 Typ. -210 -170 -8 -40 -70 -110 -270 -930 -830 200 200 140 10 110 40 Max. -50 -10 -60 -120 -150 -370 -1110 -950 400 Unit V V V nA nA mV mV mV mV mV mV MHz pF Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 2/7 Test Conditions IC=-100μA IC=-10mA IE=-100μA VCB=-150V VEB=-6V IC=-100mA, IB=-5mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-3A, IB=-300mA IC=-3A, IB=-300mA VCE=-5V, IC=-3A VCE=-5V, IC=-10mA VCE=-5V, IC=-1A VCE=-5V, IC=-3A VCE=-5V, IC=-10A VCE=-10V, IC=-100mA, f=50MHz VCB=-20V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range R 150~300 S 200~400 Ordering Information Device BTB1216J3 Package TO-252 (RoHS com pliant) Shipping 2500 pcs / Tape & Reel Marking B1216 BTB1216J3 CYStek Product Specification CYStech Electronics Corp. Recommended soldering footprint Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 3/7 BTB1216J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(mV) Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 4/7 Saturation Voltage vs Collector Current Current Gain---HFE 1000 IC=50IB IC=20IB 100 VCE=5V VCE=2V VCE=1V 100 10 IC=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT) @ IC=10IB On Vottage vs Collector Current 10000 VBE(ON)@VCE=5V 1000 On Voltage---(mV) 1 10 100 1000 Collector Current---IC(mA) 10000 1000 100 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 1.2 Power Dissipation---PD(W) Power Dissipation---PD(W) 25 20 15 10 5 0 Power Derating Curve 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 200 Case Temperature---TC(℃) BTB1216J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 5/7 Carrier Tape Dimension BTB1216J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1216J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Marking: A C Device Name Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 7/7 B L F G D B1216 HFE rank □ □□ Date Code 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1216J3 CYStek Product Specification