CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 1/4
BTC4620T3
Features
• High breakdown voltage. (BVCEO =350V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1776T3
Symbol
BTC4620T3
Outline
TO-126
B:Base C:Collector E:Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.2 7 150 -55~+150 Unit V V V mA W °C °C
BTC4620T3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 350 350 5 80 Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 200 Unit V V V µA µA V V MHz pF
Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 2/4
Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=200V, IE=0 VEB=4V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=30V, IC=10mA, f=10MHz VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range P 80~140 Q 100~200
BTC4620T3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV) 10000
Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 3/4
Saturation Voltage vs Collector Current
Current Gain---HFE
100
VCE = 10V
1000
VCE(SAT) @ IC = 20IB
10
VCE = 5V VCE = 1V
100
VCE(SAT) @ IC = 10IB
1 1 10 100 Collector Current---IC(mA) 1000
10 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
1000 Power Dissipation---PD(W) Saturation Voltage---(mV) 1.6
Power Derating Curve
1.2
VBE(SAT) @ IC =10IB
0.8
0.4
100 1 10 100 1000 Collector Current---IC(mA)
0 0 50 100 150 200 Ambient Temperature---TA(℃)
Power Derating Curve
10 Power Dissipation---PD(W) 8 6 4 2 0 0 50 100 150 Case Temperature---TC(℃) 200
BTC4620T3
CYStek Product Specification
CYStech Electronics Corp.
TO-126 Dimension
D A B 123 G C I
Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 4/4
E
J
K M
Marking:
α3 α4
C4620
Style: Pin 1.Emitter 2.Collector 3.Base
F H L
α1 α2
3-Lead TO-126 Plastic Package CYStek Package Code: T3
*: Typical
DIM α1 α2 α3 α4 A B C D E
Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413
Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05
DIM F G H I J K L M
Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520
Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4620T3
CYStek Product Specification
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