BTD2012FP

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5 BTD2012FP Features • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A • Excellent DC current gain characteristics • High allowable power dissipation, PD=25W(TC=25℃) • Large current capability • Pb-free package Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTD2012FP Outline TO-220FP B：Base C：Collector E：Emitter BC E BTD2012FP CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Visol Tj Tstg Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 2/ 5 Limits 80 60 6 3 6 (Note 1) 0.5 2 25 62.5 5 1000 150 -55~+150 Unit V V V A A W °C/W °C/W V °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. 80 60 6 120 60 Typ. 150 250 1 100 15 Max. 1 1 220 350 1.2 1 560 Unit V V V µA µA mV mV V V MHz pF Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=200mA IC=2A, IB=100mA VCE=2V, IC=500mA VCE=5V, IC=500mA VCE=5V, IC=3A VCE=5V, IC=500mA,f=5MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range Q 120~270 R 180~390 S 270~560 BTD2012FP CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 1000 Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 3/ 5 Saturation Voltage vs Collector Current Current Gain---HFE 100 VCE=5V 100 VCESAT@IC=20IB VCE=2V VCESAT@IC=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBESAT@IC=10IB Output Characteristics 6 100mA Collector Current---IC(A) 5 4 3 2 1 0 50mA 30mA 20mA 10mA IB=5mA 1000 IB=0mA 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 1 2 3 4 5 6 Collector-to-Emitter Voltage---VCE(V) On Voltage vs Collector Current 10000 Power Dissipation---PD(W) Power Derating Curve 2.5 2 1.5 1 0.5 0 VBEON@VCE=2V On Voltage---(mV) 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTD2012FP CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Power Derating Curve 30 Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temeprature---TC(℃) Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 4/ 5 BTD2012FP CYStek Product Specification CYStech Electronics Corp. TO-220FP Dimension Marking: Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 5/ 5 D2012 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical DIM A A1 A2 A3 b b1 b2 c Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2012FP CYStek Product Specification