BTD2444N3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 1/4 BTD2444N3 Features • The BTD2444N3 is designed for general purpose low frequency power amplifier applications. • Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA • Complementary to BTB1590N3 • Pb-free package Symbol BTD2444N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 40 25 6 800 1.5 (Note) 225 150 -55~+150 Unit V V V mA A mW °C °C BTD2444N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Cob Min. 40 25 6 180 40 Typ. 40 0.15 0.25 150 15 Max. 0.5 0.5 60 0.3 0.5 1 560 Unit V V V µA µA mV V V V MHz pF Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 2/4 Test Conditions IC=100µA, IE=0 IC=2mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 IC=50mA, IB=2.5mA IC=400mA, IB=20mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=1V, IC=600mA VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD2444N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking BS BTD2444N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=2V VCE(SAT)@IC=20IB Current Gain---HFE 100 100 10 0.1 1 10 100 1000 1 10 100 1000 Collector Current--- IC(mA) Collector Current ---IC(mA) Saturation Voltage vs Collector Current 1000 1 Cutoff Frequency vs Collector Current VBE(SAT)@IC=20IB Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) FT@VCE=2V 100 1 10 100 Collector Current ---IC(mA) 1000 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTD2444N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2005.06.28 Page No. : 4/4 A L Marking: 3 B 1 2 S TE BS V G C D K 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 J H Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2444N3 CYStek Product Specification