BTN8050N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 1/4 BTN8050N3 Description The BTN8050N3 is designed for general purpose low frequency amplifier applications. Features • High collector current , IC = 0.8A • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTP8550N3. Symbol BTN8050N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 30 20 5 800 1.5 (Note) 225 150 -55~+150 Unit V V V mA A W °C °C BTN8050N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 VBE(on) *hFE 1 *hFE 2 fT Cob Min. 30 20 5 100 80 Typ. 150 15 Max. 100 100 0.3 0.4 1 500 Unit V V V nA nA V V V MHz pF Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=400mA, IB=20mA IC=800mA, IB=80mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=2V, IC=800mA VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank Range C 100~200 D 150~300 E 250~500 BTN8050N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE = 5V Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Current Gain---HFE 100 VCE(SAT) @ IC=20IB 100 VCE = 2V VCE = 1V 10 VCE(SAT) @ IC=10IB 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT) @ IC=10IB On Voltage vs Collector Current 1000 On Voltage---(mV) VBE(ON) @ VCE=1V 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 BTN8050N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 4/4 A L Marking: 3 B 1 2 S TE D9 V G C D K 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H J Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050N3 CYStek Product Specification