CYStech Electronics Corp.
VHF/UHF NPN Epitaxial Planar Transistor
Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date : Page No. : 1/4
BTNH10A3
Description
The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
Features
• High transition frequency. • Very low capacitance. • Small Rbb’-Cc and high current gain.
Symbol
BTNH10A3
Outline
TO-92
B:Base C:Collector E:Emitter BEC
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 30 25 3 50 350 150 -55~+150 Unit V V V mA mW °C °C
BTNH10A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE fT Cob Rbb’-Cc Min. 30 25 3 52 650 Typ. 1000 Max. 100 100 0.5 0.95 270 0.7 9 Unit V V V nA nA V V MHz pF ps
Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date : Page No. : 2/4
Test Conditions IC=100µA IC=1mA IC=10µA VCB=25V VEB=2V IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V, IC=4mA VCE=10V, IC=4mA, f=100MHz VCB=10V, IE=0A, f=1MHz VCB=10V, IC=4mA, f=31.8MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range K 52~120 P 82~180 Q 120~270
BTNH10A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=10V
Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
VCE(SAT)@IC=5IB
Current Gain---HFE
100
100 0.1 1 10 100 1000 Collector Current ---IC(mA)
10 1 10 100 1000 Collector Current--- IC(mA)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 10
Cutoff Frequency vs Collector Current
FT@VCE=10V
VBE(SAT)@IC=5IB
1
100 1 10 100 1000 Collector Current---IC(mA)
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve
400 Power Dissipation---PD(mW) 350 300 250 200 150 100 50 0 0 50 100 150 Ambient Temperature --- Ta(℃) 200
BTNH10A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
α2
Spec. No. : C201A3-H Issued Date : 2003.11.27 Revised Date : Page No. : 4/4
A B
1 2 3
Marking:
NH10
α3
C
D
H I E F
G
α1
Style: Pin 1.Base 2.Emitter 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I α1 α2 α3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2°
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNH10A3
CYStek Product Specification
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