HBCA114ES6R

CYStech Electronics Corp. PNP and NPN Dual Digital Transistors Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 1/6 HBCA114ES6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy. •One DTA114E chip and one DTC114E chip in a SOT-363 package. •Mounting by SOT-323 automatic mounting machines is possible. •Mounting cost and area can be cut in half. •Transistor elements are independent, eliminating interference Equivalent Circuit HBCA114ES6R RBE2 RB2 TR1 RB1 RBE1 TR2 SOT-363R RB1=10kΩ , RB2=10 kΩ RBE1=10kΩ , RBE2=10 kΩ HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25℃) Parameter Supply Voltage Input Voltage Output Current Total Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 2/6 Symbol VCC VIN IO IO(max.) Pd Tj Tstg Limits Tr1(NPN) Tr2(PNP) 50 -50 -10~+40 -40~+10 50 -50 100 -100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Characteristics (Ta=25℃) •Tr1(NPN) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Min. VI(off) VI(on) 3 VO(on) II IO(off) GI 30 R1 7 R2/R1 0.8 fT Typ. 10 1 250 Max. Unit 0.5 V V 0.3 V 0.88 mA 0.5 µA 13 kΩ 1.2 MHz Test Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device •Tr2(PNP) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Min. VI(off) VI(on) -3 VO(on) II IO(off) GI 30 R1 7 R2/R1 0.8 fT Typ. 10 1 250 Max. Unit -0.5 V V -0.3 V -0.88 mA -0.5 µA 13 kΩ 1.2 MHz Test Conditions VCC=-5V, IO=-100µA VO=-0.3V, IO=-10mA IO/II=-10mA/-0.5mA VI=-5V VCC=-50V, VI=0V VO=-5V, IO=-5mA VCE=-10V, IC=-5mA, f=100MHz * * Transition frequency of the device HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves •Tr1(NPN) Current Gain vs Output Current 1000 Output Voltage---V O(on)(mV) Vo=5V 1000 Io / Ii=20 Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 3/6 Output Voltage vs Output Current Current Gain---GI 100 100 10 1 10 Output Current ---Io(mA) 100 10 1 10 100 Output Current ---Io(mA) Input Voltage vs Output Current (ON characteristics) 10 Input Voltage --- V I(on)(V) Output Current --- Io(mA) Vo=0.3V Output Current vs Input Voltage (OFF characteristics) 100 Vcc=5V 10 1 1 0.1 1 10 Output Current --- Io(mA) 100 0.1 0.1 1 Input Voltage --- VI(off)(V) 10 HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. •Tr2(PNP) C urrent Gain vs Output Current 1000 Vo = 5V Output Voltage---VO(ON)(V) Current Gain---G I 1 10 Io / Ii = 20 Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 4/6 Output Voltage vs Output Current 100 0.1 10 0.1 1 10 Output Current---IO(mA) 100 0.01 1 10 Output Current---IO(mA) 100 Input Voltage vs Output Current(ON characteristics) 100 Vo = 0.3V Input Voltage---VI(ON) (V) Output Current---I (mA) O Output Current vs Input Voltage(OFF characteristics) 10 VCC = 5 V 1 10 1 0.1 0.1 0.1 1 10 Output Current---IO(mA) 100 0.01 0 0.5 1 1.5 2 2.5 3 Input Voltage---VI(OFF) (V) Power Derating Curves 250 Power Dissipation---P D(mW) 200 150 100 50 0 0 Dual Single 50 100 150 Ambient Temperature---TA(℃) 200 HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 5/6 Carrier Tape Dimension HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 6/6 Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 11 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.20 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBCA114ES6R CYStek Product Specification