HBNP2227S6R

CYStech Electronics Corp. Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP2227S6R Features • Includes a PN2222A chip and PN2907A chip in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. Equivalent Circuit HBNP2227S6R Outline SOT-363R Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) 75 40 6 600 TR2 (PNP) -60 -60 -5 -600 200(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 150mW per element must not be exceeded. HBNP2227S6R CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) • TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) hFE hFE hFE *hFE *hFE *hFE fT Cob Min. 75 40 6 35 50 75 100 50 40 300 Typ. Max. 10 10 100 0.3 1.0 1.2 2.0 300 8 Unit V V V nA nA nA V V V V MHz pF Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 2/6 Test Conditions IC=10 A IC=10mA IE=10 A VCB=60V VCE=60V,VEB=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100 A VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2% • TR2 (PNP) Symbol Min. BVCBO -60 BVCEO -60 BVEBO -5 ICBO ICEX IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) hFE 75 hFE 100 hFE 100 *hFE 100 *hFE 50 fT 200 Cob - Typ. - Max. -10 -50 -100 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=-10 A IC=-10mA IE=-10 A VCB=-50V VCE=-30V,VEB=-0.5V VEB=-3V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-10V, IC=-100 A VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA VCE=-20V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2% HBNP2227S6R CYStek Product Specification CYStech Electronics Corp. Characteristic curves • TR1 (NPN) C urrent Gain vs Collector Current 1000 Saturation Voltage-(mV) 1000 Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 3/6 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB Current Gain---HFE VCE=10V 100 VCE=1V 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VBE(SAT)@IC=10IB Saturation Voltage-(mV) Cutoff Frequency(MHz) 1000 C utoff Frequency vs Collector Current VCE=20V 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 HBNP2227S6R CYStek Product Specification CYStech Electronics Corp. • TR2 (PNP) C urrent Gain vs Collector Current 1000 HFE@VCE=10V Saturation Voltage-(mV) Current Gain---HFE 1000 VCE(SAT)@IC=10IB Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 4/6 Saturation Voltage vs Collector Current 100 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage & Collector Current 10000 VBE(SAT)@IC=10IB Saturation Voltage-(mV) Cutoff Frequency(MHz) 1000 C utoff Frequency vs Collector Current VCE=20V 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 Power Derating Curves 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) HBNP2227S6R CYStek Product Specification d ual single CYStech Electronics Corp. Reel Dimension Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 5/6 Carrier Tape Dimension HBNP2227S6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Spec. No. : C903S6R Issued Date : 2003.03.18 Revised Date : 2004.06.19 Page No. : 6/6 Marking: 27R 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBNP2227S6R CYStek Product Specification