MTC5806Q8

CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit MTC5806Q8 Outline SOP-8 G：Gate S：Source D：Drain MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja Limits N-channel 60 ±20 4.5 4 20 Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 2/9 P-channel -55 ±20 -3.5 -3 -20 Unit V V A A A W W / °C °C °C °C/W (Note 1) (Note 1) 2 0.016 -55~+150 -55~+150 62.5 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. 60 1.0 Typ. 55 42 14 650 80 35 11 8 19 6 12 2.4 2.6 Max. 3.0 ±100 1 10 85 58 20 18 35 15 16 1.0 1.3 2.6 Unit V V nA μA μA mΩ S Test Conditions VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=48V, VGS=0 VDS=40V, VGS=0, Tj=55°C ID=4A, VGS=4.5V ID=4.5A, VGS=10V VDS=10V, ID=4.5A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM MTC5806Q8 pF VDS=25V, VGS=0, f=1MHz ns VDS=30V, ID=1A, VGS=10V, RG=6Ω nC VDS=30V, ID=4.5A, VGS=10V V A A VGS=0V, IS=1.3A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. -55 -1.0 Typ. 70 100 9 630 81 33 6 8 17 11 11 2.1 2.5 Max. -3.0 ±100 -1 -10 90 135 13 18 31 20 15 -1.0 -1.3 -2.6 Unit V V nA μA μA mΩ S Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 3/9 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-48V, VGS=0 VDS=-40V, VGS=0, Tj=55°C ID=-3.5A, VGS=-10V ID=-3A, VGS=-4.5V VDS=-5V, ID=-3.5A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - pF ns ns VDS=-30V, VGS=0, f=1MHz VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-27V, ID=-3.5A, VGS=-10V V A VGS=0V, IS=-1.3A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 4/9 MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 5/9 MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 6/9 MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves(Cont.) Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 7/9 MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 8/9 MTC5806Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 9/9 Marking: I B C H Device Name Date Code 5806SS □□□□ J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC5806Q8 CYStek Product Specification