MTEF1P15Q8

Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTEF1P15Q8 BVDSS ID@TA=25 C, VGS=-10V RDSON@VGS=-10V, ID=-1.6A RDSON@VGS=-6V, ID=-1A -150V -1.6A 650mΩ(typ) 700mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit Outline SOP-8 D D MTEF1P15Q8 D D G S S G：Gate S：Source D：Drain Pin 1 S Ordering Information Device MTEF1P15Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEF1P15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 2/9 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C, VGS=-10V Continuous Drain Current @TA=70 C, VGS=-10V Pulsed Drain Current (Note 1) TA=25 C Power Dissipation (Note 2) TA=70 C Operating Junction and Storage Temperature Range Symbol Limits BVDSS VGS -150 ±20 -1.6 -1.3 -6.4 3.1 2 -55~+150 ID IDM PD Tj ; Tstg Unit V A W C Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RJC RJA Maximum 3 40 Unit °C / W Note : W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tc=25C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS IDSS RDS(ON) GFS (Note 1) (Note 1) -150 -2 - -2.8 650 700 2.6 -3.5 ±100 -1 -10 800 910 - - 478 28 12 8 6 20 4 6 2 1.4 - S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-120V, VGS=0V VDS=-120V, VGS=0V, Tj=125C ID=-1.6A, VGS=-10V ID=-1A, VGS=-6V VDS=-10V, ID=-1.4A pF VDS=-30V, VGS=0V, f=1MHz ns VDS=-75V, ID=-1A, VGS=-10V, RG=1Ω nC VDS=-75V, ID=-1A, VGS=-10V V nA μA m Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd MTEF1P15Q8 (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr - Typ. Max. -0.78 60 120 -1.6 -6.4 -1.2 - Unit Test Conditions A V ns nC IS=-1.6A, VGS=0V IF=-1A, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width 300μs, Duty Cycle2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature MTEF1P15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 4/9 Typical Characteristics Typical Output Characteristics Typical Output Characteristics 6.4 6.4 -10V, -9V, -8V, -7V, -6V 4.8 4.0 Tj=25°C -5V 3.2 2.4 1.6 0.8 -10V, -9V, -8V, -7V, -6V 5.6 -ID, Drain Current (A) -ID, Drain Current (A) 5.6 4.8 4.0 2.4 -5V 1.6 VGS=-4V 0.0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) 0 10 2 Static Drain-Source On-State resistance vs Drain Current 4 6 8 -VDS, Drain-Source Voltage(V) 10 Source Drain Current vs Source-Drain Voltage 10000 1.2 VGS=0V VGS=-4.5V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) -5.2V 3.2 0.8 VGS=-4V 0.0 VGS=-6V 1000 VGS=-10V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 100 0.1 1 -ID, Drain Current(A) 0 10 1000 8 12 16 -IS, Source Drain Current(A) 20 R DS(on) , Normalized Static DrainSource On-State Resistance 2.2 950 ID=-1.4A 900 850 800 750 700 650 2 VGS=-10V, ID=-1.4A 1.8 1.6 1.4 1.2 1 0.8 0.6 RDS(ON) @Tj=25°C : 645mΩ typ. 0.4 0.2 600 0 MTEF1P15Q8 4 Normalized Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) Tj=0°C 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Normalized Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.6 -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss 100 Coss Crss 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics VDS=-100V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 10 1 0.1 VDS=-10V Pulsed TA=25°C 0.01 8 VDS=-75V VDS=-50V 6 4 2 ID=-1A 0.001 0.001 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 Qg, Total Gate Charge(nC) 8 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 2 10 1.8 -ID, Maximum Drain Current(A) 100μs -ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 1ms 1 10ms 100ms 0.1 1s TA=25°C, Tj=150°C, VGS=-10V θJA=40°C/W, Single Pulse DC 1.6 1.4 1.2 1 0.8 0.6 0.4 TA=25°C, VGS=-10V 0.2 0 0.01 0.1 MTEF1P15Q8 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 300 6.4 TJ(MAX) =150°C TA=25°C θJA=40°C/W VDS=-10V 5.6 -ID, Drain Current(A) 250 Power (W) Typical Transfer Characteristics 200 150 100 50 4.8 4.0 3.2 2.4 1.6 0.8 0 0.001 0.0 0.01 0.1 1 Pulse Width(s) 10 100 0 2 4 6 -VGS, Gate-Source Voltage(V) 8 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) Normalized Brekdown Voltage vs Ambient Temperature -BVDSS , Normalized Drain-Source Breakdown Voltage 1.4 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -60 MTEF1P15Q8 -20 20 60 100 Tj, Junction Temperature(°C) 140 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTEF1P15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEF1P15Q8 CYStek Product Specification Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2018.10.24 Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code EF1 P15 □□□□ 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 *: Typical Inches Min. Max. 0.1850 0.2007 0.1496 0.1575 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 DIM A B C D E F Millimeters Min. Max. 4.70 5.10 3.80 4.00 5.80 6.20 1.27 * 0.33 0.51 3.74 3.88 DIM G H I J K L Inches Min. Max. 0.0531 0.0689 0.1889 0.2007 0.0019 0.0098 0.0157 0.0500 0.0067 0.0098 0.0531 0.0610 Millimeters Min. Max. 1.35 1.75 4.80 5.10 0.05 0.25 0.40 1.27 0.17 0.25 1.35 1.55 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:  Lead: Pure tin plated.  Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:  All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  CYStek reserves the right to make changes to its products without notice.  CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEF1P15Q8 CYStek Product Specification