CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 1/6
MTP2301N3
Features
• VDS=-20V RDS(ON)=130mΩ@VGS=-4.5V, IDS=-2.8A RDS(ON)=190mΩ@VGS=-2.5V, IDS=-2A • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free package
Equivalent Circuit
MTP2301N3
Outline
SOT-23 D
G G:Gate S:Source D:Drain
S
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Symbol VDS VGS ID IDM Ta=25℃ Ta=75℃ PD Tj Tstg Limits -20 ±8 -2.3 -10 1.25 0.8 -55~+150 -55~+150 Unit V V A A W °C °C
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Lead Temperature, for 5 second soldering(1/8” from case)
Note : Surface mounted on FR-4 board, t≦5sec.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 2/6
Symbol Rth,ja TL
Limit 100 260
Unit °C/W °C
Electrical Characteristics (Ta=25°C)
Symbol Static BVDSS VGS(th) IGSS IDSS *ID(ON) *RDS(ON) Min. -20 -0.45 -6 Typ. 95 122 6.5 447 127 80 5 19 95 65 5.4 0.8 1.1 -0.8 Max. ±100 -1 130 190 25 60 110 80 10 -1.6 -1.2 Unit V V nA µA A mΩ S Test Conditions VGS=0, ID=-250µA VDS=VGS, ID=-250µA VGS=±8V, VDS=0 VDS=-16V, VGS=0 VDS≥-10V, VGS=-5V ID=-2.8A, VGS=-4.5V ID=-2A, VGS=-2.5V VDS=-5V, ID=-2.8A
*GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode ISD VSD -
pF
VDS=-6V, VGS=0, f=1MHz VDD=-6V, ID=-1A, RL=6Ω VGEN=-4.5V, RG=6Ω VDS=-6V, ID=-2.8A, VGS=-4.5V, VGS=0V, ISD=-1.6A
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
ns
nC
A V
Ordering Information
Device MTP2301N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 01
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 3/6
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 4/6
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 5/6
Carrier Tape Dimension
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L 3 B 1 2 S
Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 6/6
Marking:
TE 01
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2301N3
CYStek Product Specification
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