| IPT0408-50F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS825-40B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS808-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-08D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-08D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-03I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CRST073N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):160A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):6.2mΩ@10V,60A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):5.416nF@75V;反向传输电容(Crss@Vds):31pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CRTT084NE6N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):81A;功率(Pd):111W;导通电阻(RDS(on)@Vgs,Id):8.4mΩ@10V,40A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| SKTT077N07N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):70V;连续漏极电流(Id):80A;功率(Pd):135W;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,40A;阈值电压(Vgs(th)@Id):3.6V@250uA; | | | 获取价格 |
| CRTD110N03L | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):20A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):11mΩ@10V,12A;阈值电压(Vgs(th)@Id):1.8V@250uA; | | | 获取价格 |
| CS55N06A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):55A;功率(Pd):69.5W;导通电阻(RDS(on)@Vgs,Id):13mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.9V@250uA; | | | 获取价格 |
工商网监