IPS625-40A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS625-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS612-15B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS612-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS612-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS612-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS604-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-05I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS604-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS604-03D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS6008-08U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-08U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
CS2N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
CR7N65A4K | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):7A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):24nC@10V;输入电容(Ciss@Vds):1.08nF@25V;反向传输电容(Crss@Vds):3.2pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
CR4N60A4K | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
CRST085N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):120A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):4.217nF@75V;反向传输电容(Crss@Vds):38pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
CRSD082N10L2 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA; | | | 获取价格 |
CRJQ80N65F | Wuxi China Resources Microelectronics Limited | MOSFETs N-CH 650V 43A 77mΩ TO247-3L | | | 获取价格 |
CRXU10D065G2 | Wuxi China Resources Microelectronics Limited | CRXU10D065G2 | | | 获取价格 |
CRTS045N06N | Wuxi China Resources Microelectronics Limited | MOSFETs N-沟道 VDS=60V VGS=±25V ID=120A RDS(ON)=4.5mΩ@60A,10V TO263 | | | 获取价格 |
PC817B | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
PC817C | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
CRST060N10N | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel 100V 120A TO220-3 3V@250µA 227W | | | 获取价格 |
CS5N60A8H | Wuxi China Resources Microelectronics Limited | CS5N60A8H | | | 获取价格 |
CRTM024N03L2-G | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=30V VGS=±20V ID=60A RDS(ON)=2.2mΩ@10V DFN_5X6MM | | | 获取价格 |