| IPT0408-25F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-25F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-18F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-50F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS825-40A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-15B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS616-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS616-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-06D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-06D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-03U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-03U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS100N03B4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):5.3mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| PC817MB | Wuxi China Resources Microelectronics Limited | 输入电压类型:DC;输出通道数:1;正向电压:1.2V;反向电压:6V;输出电流:50mA;接收端电压:80V;集射极饱和电压(Vce(sat)@Ic,IF):100mV@1mA,20mA;隔离电压(rms):5kV; | | | 获取价格 |
| CRST037N10N | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST049N08N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):189W;导通电阻(RDS(on)@Vgs,Id):4.9mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS4N60A4R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS7N65FA9R | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS7N65FA9D | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
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