| PDTA123YT,215 | Rubycon Corporation | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | | | 获取价格 |
| PDTC143ZT,215 | Rubycon Corporation | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 230MHz 250mW 100mA 50V 1uA SOT-23 Digital Transistors ROHS | | | 获取价格 |
| PDTB123ET,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):40@50mA,5V; | | | 获取价格 |
| PBRP113ET,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | | | 获取价格 |
| PDTA113ZT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100mA;直流电流增益(hFE@Ic,Vce):35@5mA,5V; | | | 获取价格 |
| PDTB143ETR | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):320mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):500nA;直流电流增益(hFE@Ic,Vce):60@50mA,5V; | | | 获取价格 |
| PDTC123JT,235 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):100@10mA,5V; | | | 获取价格 |
| PMV15UNEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):7A;功率(Pd):610mW；8.3W;导通电阻(RDS(on)@Vgs,Id):19mΩ@7A,4.5V; | | | 获取价格 |
| PMV230ENEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.5A;功率(Pd):480mW；1.45W;导通电阻(RDS(on)@Vgs,Id):222mΩ@1.5A,10V; | | | 获取价格 |
| BSS138AKAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):200mA;功率(Pd):300mW；1.06W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@100mA,10V; | | | 获取价格 |
| 2N7002--HAMR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,500mA; | | | 获取价格 |
| 2N7002NXBKR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):270mA；330mA;功率(Pd):310mW；1.67W;导通电阻(RDS(on)@Vgs,Id):2.8Ω@200mA,10V; | | | 获取价格 |
| PDTC143ET,235 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):30@10mA,5V; | | | 获取价格 |
| PDTD123ET,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):40@50mA,5V; | | | 获取价格 |
| MMBT3904 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW; | | | 获取价格 |
| PMBT4401,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,1V; | | | 获取价格 |
| BC817-25,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):160@100mA,1V; | | | 获取价格 |
| BC846B,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):290@2mA,5V; | | | 获取价格 |
| PMBT4403,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,2V; | | | 获取价格 |
| BC847C,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):420@2mA,5V; | | | 获取价格 |
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