| PRTR5V0U2X-N | BORN Semiconductor (Shenzhen) Co. Ltd. | ESD保护二极管 SOT143 VRWM=5V VBR(Min)=6V VC=10V IPP=3.5A Ppp=40W | | | 获取价格 |
| SS36 | BORN Semiconductor (Shenzhen) Co. Ltd. | SMA塑料表面安装肖特基势垒整流器SMA VRRM=60V Io=3A | | | 获取价格 |
| SMAJ20A | BORN Semiconductor (Shenzhen) Co. Ltd. | TVS二极管 VRWM=20V VBR(Min)=22.2V VC=32.4V IPP=12.4A Ppp=400W SMA | | | 获取价格 |
| SMBJ16A | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器VC=26V IPP=23.1A SMB | | | 获取价格 |
| SMFJ18CA | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器 VC=29.2V IPP=6.8A SOD123FL | | | 获取价格 |
| BST23A052U | BORN Semiconductor (Shenzhen) Co. Ltd. | ESD保护二极管阵列SOT-23 0.7pF VC=17V IPP=3.5A | | | 获取价格 |
| BZT52C30 | BORN Semiconductor (Shenzhen) Co. Ltd. | 齐纳/稳压二极管 SOD-123 0.9V 5A 0.1uA 500mW | | | 获取价格 |
| BZT52C3V9 | BORN Semiconductor (Shenzhen) Co. Ltd. | 稳压二极管 Vz=3.9V 3.7V~4.1V Izt=5mA P=500mW SOD123 | | | 获取价格 |
| BZT52C3V3 | BORN Semiconductor (Shenzhen) Co. Ltd. | 稳压二极管 Vz=3.3V 3.1V~3.5V Izt=5mA P=500mW SOD123 | | | 获取价格 |
| SMAJ12A | BORN Semiconductor (Shenzhen) Co. Ltd. | ESD抑制器/TVS二极管 VRWM=12V VBR(Min)=13.3V VC=19.9V IPP=20.1A SMA | | | 获取价格 |
| SMAJ30CA | BORN Semiconductor (Shenzhen) Co. Ltd. | ESD抑制器/TVS二极管 VRWM=30V VBR(min)=33.3V VC=48.4V@IPP=8.3A SMA | | | 获取价格 |
| SMAJ24A | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器PPP=400W SMA VC=38.9V IPP=10.3A | | | 获取价格 |
| SMAJ13CA | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器PPP=400W SMA VC=21.5V IPP=18.8A | | | 获取价格 |
| SMBJ28CA | BORN Semiconductor (Shenzhen) Co. Ltd. | SMB SMT 28V 45.4V | | | 获取价格 |
| SMFJ26A | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器VC=42.1V IPP=4.8A SOD123FL | | | 获取价格 |
| SMFJ24CA | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器VC=38.9V IPP=5.1A SOD123FL | | | 获取价格 |
| SMFJ40CA | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器VC=64.5V IPP=3.1A SOD123FL | | | 获取价格 |
| SMFJ33A | BORN Semiconductor (Shenzhen) Co. Ltd. | 瞬态电压抑制器VC=53.3V IPP=3.8A SOD123FL | | | 获取价格 |
| MMBT2907A | BORN Semiconductor (Shenzhen) Co. Ltd. | 晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：600mA 功率(Pd)：250mW 集电极截止电流(Icbo)：20nA 集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：1.6V@500mA,50mA 直流电流增益(hFE@Ic,Vce)：100@150mA,10V 特征频率(fT)：200MHz 工作温度：+150℃@(Tj) transistors,PNP 60V 600mA 250mW,SOT-23 | | | 获取价格 |
| TPD4E001DRLR-N | BORN Semiconductor (Shenzhen) Co. Ltd. | SOT-563 5V 60W 3.5A | | | 获取价格 |
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