| VBL2610N | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):64mΩ@10V,30A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| NTR0202PLT1G-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):2.5W;导通电阻(RDS(on)@Vgs,Id):35mΩ@10V,5.1A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):6.4nC@2.5V;输入电容(Ciss@Vds):835pF@10V;反向传输电容(Crss@Vds):155pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AO3414-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| APM2301CAC-TRL-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-20V;连续漏极电流(Id):-5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@-4.5V,-5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| BSH103-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A; | | | 获取价格 |
| APM2305AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-30V;连续漏极电流(Id):-5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@-10V,-5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO3416-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTR4503NT1G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):1.7W;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):1.1V@250uA;栅极电荷(Qg@Vgs):2.1nC@4.5V;输入电容(Ciss@Vds):335pF@15V;反向传输电容(Crss@Vds):170pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ST2300S23RG-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):2.1W;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):1V@250uA; | | | 获取价格 |
| BSH114-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):240mΩ@10V,2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AP2301N-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| APM2321AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| 2N7002E-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):340mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,300mA;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| BSS308PE-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-30V;连续漏极电流(Id):-5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@-10V,-5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| CMN2305M-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLMS6802TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HM8810A-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):24mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NCE30H12K-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):250W;导通电阻(RDS(on)@Vgs,Id):2.31mΩ@10V,38.8A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):81.5nC@4.5V;输入电容(Ciss@Vds):6.201nF@15V;反向传输电容(Crss@Vds):970pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| NIF9N05CL-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4.5A;功率(Pd):4W;导通电阻(RDS(on)@Vgs,Id):76mΩ@10V,4A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):10nC@4.5V;输入电容(Ciss@Vds):810pF@30V;反向传输电容(Crss@Vds):100pF@30V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| FDT86113LZ-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):100mΩ@10V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
工商网监