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1N6280

1N6280

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    1N6280 - POWER 1500Watts VOLTAGE 6.8 to 440 Volts - Daesan Electronics Corp.

  • 数据手册
  • 价格&库存
1N6280 数据手册
1.5KE SERIES AND 1N6267 THRU 1N6303(C)A Features · Underwriters Laboratory recognition under UL standard for safety 497B : Isolated loop circuit protection · Glass passivated junction · 1500W peak pulse power capability on 10/1000μS waveform, repetition rate(duty cycle) : 0.05% · Excellent clamping capability · Low incremental surge resistance · Very fast response time · Includes 1N6267 thru 1N6303A POWER 1500Watts VOLTAGE 6.8 to 440 Volts DO-201AD 0.210(5.3) 0.188(4.8) DIA. 1.0(25.4) MIN. Mechanical Data · Case : JEDEC DO-201AD molded plastic body over passivated junction · Terminals : Solder plated axial leads, solderable per MIL-STD-750, method 2026 · High temperature soldering guaranteed : 265℃/10 seconds, 0.375"(9.5mm) lead length, 5lbs. (2.3Kg) tension · Polarity : For uni-directional types the color band denotes cathode, which is positive with respect to the anode under normal TVS operation · Mounting Position : Any · Weight : 0.042 ounce, 0.18 gram · Flammability : Epoxy is rated UL 94V-0 0.375(9.5) 0.285(7.2) 0.042(1.1) 0.037(0.9) DIA. 1.0(25.4) MIN. Dimensions in inches and (millimeters) Devices For Bidirectional Applications · For bi-directional use C or CA suffix for types 1.5KE6.8 thru types K1.5E440(e.g. 1.5KE6.8C, 1.5KE440CA), electrical characteristics apply in both directions. Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) Symbols Peak power dissipation with a 10/1000μS waveform (Note 1. Fig. 1) Peak pulse current with a 10/1000μS waveform (Note 1) Steady state power dissipation at TL=75℃ lead length 0.375"(9.5mm) (Note2) Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 3) Maximum instantaneous forward voltage at 100A for unidirectional only (Note4) Typical thermal resistance junction to lead Typical thermal resistance junction to ambient Operating junction and storage temperature range PPPM IPPM PM(AV) IFSM VF Values 1500 See next table 6.5 200 3.5/5.0 20 75 -55 to +175 Units Watts Amps Watts Amps Volts ℃/W ℃/W ℃ RθJL RθJA TJ,TSTG Notes: (1) Non repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig.2 (2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5 (3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum (4) VF=3.5 Volts for 1.5KE220(A) & below; VF=5.0 Volts for 1.5KE250(A) & above ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified) JEDEC Type Number 1N6267 (C ) 1N6267 (C ) A 1N6268 (C ) 1N6268 (C ) A 1N6269 (C ) 1N6269 (C ) A 1N6270 (C ) 1N6270 (C ) A 1N6271 (C ) 1N6271 (C ) A 1N6272 (C ) 1N6272 (C ) A 1N6273 (C ) 1N6273 (C ) A 1N6274 (C ) 1N6274 (C ) A 1N6275 (C ) 1N6275 (C ) A 1N6276 (C ) 1N6276 (C ) A 1N6277 (C ) 1N6277 (C ) A 1N6278 (C ) 1N6278 (C ) A 1N6279 (C ) 1N6279 (C ) A 1N6280 (C ) 1N6280 (C ) A 1N6281 (C ) 1N6281 (C ) A 1N6282 (C ) 1N6282 (C ) A 1N6283 (C ) 1N6283 (C ) A 1N6284 (C ) 1N6284 (C ) A 1N6285 (C ) 1N6285 (C ) A 1N6286 (C ) 1N6286 (C ) A 1N6287 (C ) 1N6287 (C ) A 1N6288 (C ) 1N6288 (C ) A 1N6289 (C ) 1N6289 (C ) A 1N6290 (C ) 1N6290 (C ) A 1N6291 (C ) 1N6291 (C ) A 1N6292 (C ) General Semiconductor Part Number 1.5K E 6.8 (C ) 1.5K E 6.8 (C ) A 1.5K E 7.5 (C ) 1.5K E 7.5 (C ) A 1.5K E 8.2 (C ) 1.5K E 8.2 (C ) A 1.5K E 9.1 (C ) 1.5K E 9.1 (C ) A 1.5K E 10 (C ) 1.5K E 10 (C ) A 1.5K E 11 (C ) 1.5K E 11 (C ) A 1.5K E 12 (C ) 1.5K E 12 (C ) A 1.5K E 13 (C ) 1.5K E 13 (C ) A 1.5K E 15 (C ) 1.5K E 15 (C ) A 1.5K E 16 (C ) 1.5K E 16 (C ) A 1.5K E 18 (C ) 1.5K E 18 (C ) A 1.5K E 20 (C ) 1.5K E 20 (C ) A 1.5K E 22 (C ) 1.5K E 22 (C ) A 1.5K E 24 (C ) 1.5K E 24 (C ) A 1.5K E 27 (C ) 1.5K E 27 (C ) A 1.5K E 30 (C ) 1.5K E 30 (C ) A 1.5K E 33 (C ) 1.5K E 33 (C ) A 1.5K E 36 (C ) 1.5K E 36 (C ) A 1.5K E 39 (C ) 1.5K E 39 (C ) A 1.5K E 43 (C ) 1.5K E 43 (C ) A 1.5K E 47 (C ) 1.5K E 47 (C ) A 1.5K E 51 (C ) 1.5K E 51 (C ) A 1.5K E 56 (C ) 1.5K E 56 (C ) A 1.5K E 62 (C ) 1.5K E 62 (C ) A 1.5K E 68 (C ) 1.5K E 68 (C ) A 1.5K E 75 (C ) Breakdown Voltage V(BR) at I T (1) (V) Min 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 Max 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.8 58.8 68.2 65.1 74.8 71.4 82.5 Test Current IT (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 Maximum Reverse Leakage at V WM I D(4) ( µA) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current I PPM(2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 24.2 25.3 22.1 23.1 20.4 21.4 18.6 19.5 16.9 17.6 15.3 16.3 13.9 Maximum Clamping Voltage at I PPM VC ( V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 109 Maximum Temp. Coefficient of V(BR) (% /¡ C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.089 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified) JEDEC Type Number 1N6292 (C ) A 1N6293 (C ) 1N6293 (C ) A 1N6294 (C ) 1N6294 (C ) A 1N6295 (C ) 1N6295 (C ) A 1N6296 (C ) 1N6296 (C ) A 1N6297 (C ) 1N6297 (C ) A 1N6298 (C ) 1N6298 (C ) A 1N6299 (C ) 1N6299 (C ) A 1N6300 (C ) 1N6300 (C ) A 1N6301 (C ) 1N6301 (C ) A 1N6302 (C ) 1N6302 (C ) A 1N6303 (C ) 1N6303 (C ) A General Semiconductor Part Number 1.5K E 75 (C ) A 1.5K E 82 (C ) 1.5K E 82 (C ) A 1.5K E 91 (C ) 1.5K E 91 (C ) A 1.5K E 100 (C ) 1.5K E 100 (C ) A 1.5K E 110 (C ) 1.5K E 110 (C ) A 1.5K E 120 (C ) 1.5K E 120 (C ) A 1.5K E 130 (C ) 1.5K E 130 (C ) A 1.5K E 150 (C ) 1.5K E 150 (C ) A 1.5K E 160 (C ) 1.5K E 160 (C ) A 1.5K E 170 (C ) 1.5K E 170 (C ) A 1.5K E 180 (C ) 1.5K E 180 (C ) A 1.5K E 200 (C ) 1.5K E 200 (C ) A 1.5K E 220 (C ) 1.5K E 220 (C ) A 1.5K E 250 (C ) 1.5K E 250 (C ) A 1.5K E 300 (C ) 1.5K E 300 (C ) A 1.5K E 350 (C ) 1.5K E 350 (C ) A 1.5K E 400 (C ) 1.5K E 400 (C ) A 1.5K E 440 (C ) 1.5K E 440 (C ) A Breakdown Voltage V(BR) at I T (1) (V) Min 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 136 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 Max 78.8 90.2 86.1 100.0 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 Test Current IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 Maximum Reverse Leakage at VWM I D(4) ( µA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current I PPM(2) (A) 14.6 12.7 13.3 11.5 12.0 10.4 10.9 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.1 6.4 5.8 6.1 5.2 5.5 4.4 4.6 4.2 4.4 3.5 3.6 3.0 3.1 2.6 2.7 2.4 2.5 Maximum Clamping Voltage at I PPM VC ( V) 104 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 Maximum Temp. Coefficient of V(BR) (% /¡ C) 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.106 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Notes : (1) (2) (3) (4) P uls e tes t: tp = 5 0ms S urge current wa ve for m per F ig. 3 and derate per F ig. 2 All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35 F or bidirectional types with V R 10 volts and les s the I D limit is doubled A pplic ation ¥ T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components . ¥ T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to e lectronic circuitr y ( ref: R .E .A. s pecification P.E . 60). ¥ T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 wa tts for one millis econd. T he res pons e time of T V S diode clamping action is e ffectively ins tantaneous (1 x 10 -9 s econds bidirectional); therefore , the y can protect integrated circuits , MOS devices , hybrids , and other voltage s ens itive s emiconductors and components . T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings . RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A Fig. 1Ð P eak P uls e P o wer R ating C ur ve 100 Fig. 2Ð P uls e Derating C ur ve P eak P uls e P ower (P P P ) or C urrent (I P P ) Derating in P ercentage, % 100 P eak P uls e P ower (kW) 75 10 50 1 P PPM , 25 0.1 0.1μS 1.0μS 1 0μS 100μS 1 .0ms 10ms 0 0 25 50 75 100 125 150 175 200 td , P uls e Width (s ec.) TA , A mbient Temperature ( oC ) Fig. 3Ð P uls e W a veform 150 F ig. 4 - T ypic al J unc tion C apac itanc e 10,000 P eak P uls e C urrent, % I R S M tr = 10μS P eak V alue IP P M 100 C J , C apacitance, pF T J = 25 C P uls e Width (td) is defined as the point where the peak current decays to 50% of I P P M o Unidirectional B idirectional VR = 0 1,000 Half V alue IP P M 50 IP P 2 10/1000 μS W aveform as defined by R .E .A. td 100 V R = R ated S tand-off V oltage f = 1 MHz V s ig = 50mV p-p o T J = 25 C 5 10 100 500 IP P M , 0 0 1.0 2.0 3.0 4.0 10 t, T ime (ms ) V (B R ) , B reakdown V oltage (V ) P M(AV ) , S teady S tate P ower Dissipation (W) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 F ig. 5Ð S tead y S tate P o wer D erating C ur ve 60 H Z R es is tive or Inductive Load F ig. 6 - Maximum Non-repetitive P eak F orwar d S ur g e C urrent Unidirectional Onl y 200 P eak F orward S urge C urrent (A) 8.3ms S ingle Half S ine-W ave (J E DE C Method) T J = T J max. 100 L = 0 .375" (9.5mm) L ead Lengths 1.6 x 1.6 x .040" ( 40 x 40 x 1mm) C opper Heat S inks 25 50 75 100 125 150 o 10 175 200 1 10 100 TL , L ead Temperature ( C ) Number of C ycles at 60 H Z RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A F ig. 7Ð I nc remental C lamping Volta g e C ur ve (Unidirec tional) 100 V C , Incremental C lamping Voltage Wa ve for m: 8/20 μS I mpuls e V C = V C - V (B R ) 1.5K E 200 100 V C , Incremental C lamping Voltage F ig. 8Ð I nc remental C lamping Volta g e C ur ve (Unidirec tional) Wa ve for m: 10/1000μS I mpuls e V C = V C - V (B R ) 1.5K E 200 1.5K E 130 1.5K E 75 1.5K E 130 20 10 20 10 1.5K E 39 1.5K E 100 1.5K E 75 2.0 1.0 1.5K E 39 1.5K E 33 1.5K E 6.8 1.5K E 9.1 1.5K E 18 1.5K E 12 2.0 1.0 1.5K E 33 1.5K E 6.8 1.5K E 9.1 0.2 0.1 0.5 1 2.0 10 20 I P P , P eak P uls e C urrent (A) 50 0.2 0.1 0.5 1 2.0 10 I P P , P eak P uls e C urrent (A) 50 100 V C , Incremental C lamping Voltage F ig. 7Ð I nc remental C lamping Volta g e C ur ve (B idirec tional) Wa ve for m: 8/20 μS I mpuls e V C = V C - V (B R ) 1.5K E 200C 100 V C , Incremental C lamping Voltage F ig. 1 0Ð I nc remental C lamping Volta g e C ur ve (B idirec tional) Wa ve for m: 10/1000 S I mpuls e μ V C = V C - V (B R ) 1.5K E 200C 20 10 20 10 1.5K E 75C 1.5K E 39C 1.5K E 30C 1.5K E 75C 1.5K E 39C 1.5K E 30C 1.5K E 15C 11C 1.5K E 7.5C 2.0 1.0 2.0 1.0 1.5K E 15C 1.5K E 11C 1.5K E 7.5C 0.2 0.1 0.5 1 2.0 10 20 I P P , P eak P uls e C urrent (A) 50 0.2 0.1 0.5 1 2.0 10 20 I P P , P eak P uls e C urrent (A) 50 RATINGS AND CHARACTERISTIC CURVES 1.5KE SERIES AND 1N6267 THRU 1N6303(C)A Fig. 11Ð Ins tantaneous Forwar d Volta g e C harac teris tic s C ur ve 100 F ig. 1 2Ð T ypic al T rans ient T hermal Impedanc e T rans ient T hermal Impedance ( O C /W) 100 Ins tantaneous F orward C urrent (A) 10 10 1 1 0.1 0 0.4 0.8 P uls e width = 300 S μ 1% Duty C ycle T J = 25 OC 1.2 1.6 2.0 0.1 0.001 0.01 0.1 1 10 100 1000 Ins tantaneous F orward V oltage (V ) tp , P uls e Duration (s ec) Fig. 13ÐTypical R e vers e L eaka ge C harac teris tic s 1000 R evers e Leakage C urrent ( μA) 100 10 1.0 0.1 0.01 0 100 200 300 400 500 600 B reakdown V oltage (V )
1N6280 价格&库存

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