DS1609S-50

DS1609 DS1609 Dual Port RAM FEATURES PIN ASSIGNMENT • Totally asynchronous 256–byte dual port memory PORT A PORT B AD7A 1 24 VCC AD6A 2 23 OEB low AD5A 3 22 CEB • Dual AD4A 4 21 WEB AD3A 5 20 AD0B AD2A 6 19 AD1B AD1A 7 18 AD2B AD0A 8 17 AD3B WEA 9 16 AD4B CEA 10 15 AD5B OEA 11 14 AD6B GND 12 13 AD7B • Multiplexed address and data bus keeps pin count port memory cell allows random access with minimum arbitration • Each port has standard independent RAM control signals • Fast access time • Low power CMOS design • 24–pin DIP or 24–pin SOIC surface mount package DS1609 24–PIN DIP (600 MIL) See Mech. Drawings Section • Both CMOS and TTL compatible • Operating temperature of –40°C to +85°C PORT A AD7A AD6A AD5A AD4A AD3A AD2A AD1A AD0A WEA CEA OEA GND • Standby current of 100 nA @ 25°C makes the device ideal for battery backup or battery operate applications. 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 PORT B VCC OEB CEB WEB AD0B AD1B AD2B AD3B AD4B AD5B AD6B AD7B DS1609S 24–PIN SOIC (300 MIL) See Mech. Drawings Section PIN DESCRIPTION AD0–AD7 CE WE OE VCC GND – – – – – – Port address/data Port enable Write enable Output enable +5 volt supply Ground DESCRIPTION The DS1609 is a random access 256–byte dual port memory designed to connect two asyncronous address/data buses together with a common memory element. Both ports have unrestricted access to all 256 bytes of memory, and with modest system discipline no arbitration is required. Each port is controlled by three control signals: output enable, write enable, and port enable. The device is packaged in plastic 24–pin DIP and 24–pin SOIC. Output enable access time of 50 ns is available when operating at 5 volts. 020499 1/7 DS1609 OPERATION – READ CYCLE The main elements of the dual port RAM are shown in Figure 1. A read cycle to either port begins by placing an address on the multiplexed bus pins AD0 – AD7. The port enable control (CE) is then transitioned low. This control signal causes address to be latched internally. Addresses can be removed from the bus provided address hold time is met. Next, the output enable control (OE) is transitioned low, which begins the data access portion of the read cycle. With both CE and OE active low, data will appear valid after the output enable access time tOEA. Data will remain valid as long as both port enable and output enable remains low. A read cycle is terminated with the first occurring rising edge of either CE or OE. The address/data bus will return to a high impedance state after time tCEZ or tOEZ as referenced to the first occurring rising edge. WE must remain high during read cycles. OPERATION – WRITE CYCLE A write cycle to either port begins by placing an address on the multiplexed bus pins AD0 – AD7. The port enable control (CE) is then transitioned low. This control signal causes address to be latched internally. As with a read cycle, the address can be removed from the bus provided address hold time is met. Next the write enable control signal (WE) is transitioned low which begins the write data portion of the write cycle. With both CE and 020499 2/7 WE active low the data to be written to the selected memory location is placed on the multiplexed bus. Provided that data setup (tDS) and data hold (tDH) times are met, data is written into the memory and the write cycle is terminated on the first occurring rising edge of either CE or WE. Data can be removed from the bus as soon as the write cycle is terminated. OE must remain high during write cycles. ARBITRATION The DS1609 dual port RAM has a special cell design that allows for simultaneous accesses from two ports (see Figure 2). Because of this cell design, no arbitration is required for read cycles occurring at the same instant. However, an argument for arbitration can be made for reading and writing the cell at the exact same instant or for writing from both ports at the same instant. A simple way to assure that read/write conflicts don’t occur is to perform redundant read cycles. Write/write arbitration needs can be avoided by assigning groups of addresses for write operation to one port only. Groups of data can be assigned check sum bytes which would guarantee correct transmission. A software arbitration system using a “mail box” to pass status information can also be employed. Each port could be assigned a unique byte for writing status information which the other port would read. The status information could tell the reading port if any activity is in progress and indicate when activity is going to occur. DS1609 BLOCK DIAGRAM: DUAL PORT RAM Figure 1 PORT A PORT B 8 ADDRESS MUX ADDRESS/DATA ADDRESS/ DATA MUX LATCH DECODE 8 ADDRESS ADDRESS/ DATA MUX LATCH DECODE 256 BYTE DUAL PORT MEMORY MATRIX 8 DATA 8 DATA WE WE OE CE MUX ADDRESS/DATA CONTROL LOGIC CONTROL LOGIC OE CE DUAL PORT MEMORY CELL Figure 2 VCC DATA–PORT A DATA–PORT B DATA–PORT A DATA–PORT B 020499 3/7 DS1609 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature –0.5V to +7.0V –40°C to +85°C –55°C to +125°C 260°C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (–40°C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Power Supply VCC 4.5 5.0 5.5 V 1 Input Logic 1 VIH 2.0 VCC + 0.3 V 1 Input Logic 0 VIL –0.3 +0.8 V 1 (–40°C to +85°C; VCC = 5V ± 10%) DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN Input Impedance ZIN 50K CE, WE, OE Leakage ILO –1.0 TYP MAX UNITS NOTES Ω 2 +1.0 µA Standby Current ICCS1 3.0 5.0 mA 3, 4, 13 Standby Current ICCS2 50 300 µA 3, 5, 13 Standby Current ICCS3 100 nA 3, 6, 13 Operating Current ICC 18 mA 7, 13 Logic 1 Output VOH V 8 Logic 0 Output VOL V 9 30 2.4 0.4 CAPACITANCE PARAMETER (tA = 25°C) SYMBOL MIN TYP MAX UNITS Input Capacitance CIN 5 10 pF I/O Capacitance CI/O 5 10 pF 020499 4/7 NOTES DS1609 (–40°C to +85°C; VCC = 5V ± 10%) AC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Address Setup Time tAS 5 ns Address Hold Time tAH 25 ns Output Enable Access tOEA 0 50 ns OE to High Z tOEZ 0 20 ns CE to High Z tCEZ 0 20 ns Data Setup Time tDS 0 ns Data Hold Time tDH 10 ns Write Pulse Width tWP 50 ns 11 CE Recovery Time tCER 20 ns 12 WE Recovery Time tWER 20 ns 12 OE Recovery Time tOER 20 ns 12 CE to OE Setup Time tCOE 25 ns CE to WE Setup Time tCWE 25 ns AC ELECTRICAL CHARACTERISTICS PARAMETER 10 (–40°C to +85°C; VCC = 2.5V – 4.5V) SYMBOL MIN TYP MAX UNITS NOTES Address Setup Time tAS 5 ns Address Hold Time tAH 25 ns Output Enable Access tOEA 0 100 ns OE to High Z tOEZ 0 20 ns CE to High Z tCEZ 0 20 ns Data Setup Time tDS 0 ns Data Hold Time tDH 10 ns Write Pulse Width tWP 100 ns 11 CE Recovery Time tCER 20 ns 12 WE Recovery Time tWER 20 ns 12 OE Recovery Time tOER 20 ns 12 CE to OE Setup Time tCOE 25 ns CE to WE Setup Time tCWE 25 ns 10 020499 5/7 DS1609 DUAL PORT RAM TIMING: READ CYCLE DURING READ CYCLE WE = VIH AD0 – AD7 ADDRESS VALID DON’T CARE DATA OUT VALID tAS tAH tCEZ CE tCOE tOEA tOEZ OE NOTES: 1. During read cycle the address must be off the bus prior to tOEA minimum to avoid bus contention. 2. Read cycles are terminated by the first occurring rising edge of OE or CE. DUAL PORT RAM TIMING: WRITE CYCLE DURING WRITE CYCLE OE = VIH AD0 – AD7 ADDRESS VALID DON’T CARE DATA IN VALID tAS tAH CE tCWE tDS WE NOTE: 1. Write cycles are terminated by the first occurring edge of WE or CE. 020499 6/7 tWP tDH DS1609 NOTES: 1. All Voltages are referenced to ground. 2. All pins other than CE, WE, OE, VCC and ground are continuously driven by a feedback latch in order to hold the inputs at one power supply rail or the other when an input is tristated. The minimum driving impedance presented to any pin is 50KΩ. If a pin is at a logic low level, this impedance will be pulling the pin to ground. If a pin is at a logic high level, this impedance will be pulling the pin to VCC. 3. Standby current is measured with outputs open circuited. 4. ICCS1 is measured with all pins within 0.3V of VCC or GND and with CE at a logic high or logic low level. 5. ICCS2 is measured with all pins within 0.3V of VCC or ground and with CE within 0.3V of VCC. 6. ICCS3 is measured with all pins at VCC or ground potential and with CE = VCC. Note that if a pin is floating, the internal feedback latches will pull all the pins to one power supply rail or the other. 7. Active current is measured with outputs open circuited, and inputs swinging full supply levels with one port reading and one port writing at 100 ns cycle time. Active currents are a DC average with respect to the number of 0’s and 1’s being read or written. 8. Logic one voltages are specified at a source current of 1 mA. 9. Logic zero voltages are specified at a sink current of 4 mA. 10. Measured with a load as shown in Figure 3. 11. tWP is defined as the time from WE going low to the first of the rising edges of WE and CE. 12. Recovery time is the amount of time control signals must remain high between successive cycles. 13. Typical values are at 25°C. LOAD SCHEMATIC Figure 3 +5 VOLTS 1.1KΩ D.U.T. 680 Ω 30 pF 020499 7/7