2SA673

DC COMPONENTS CO., LTD. R 2SA673 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -35 -5 -500 400 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -35 -35 -5 60 35 2% Typ -0.1 190 Max -0.5 -0.5 -0.6 -1.2 320 - Unit V V V µA µA V V MHz Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-150mA, IB=-15mA IC=-150mA, IB=-15mA IC=-10mA, VCE=-3V IC=-500mA, VCE=-3V IC=-20mA, VCE=-6V Collector-Base Breakdown Voltage Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain (1) (1) VCE(sat) VBE(sat) hFE1 hFE2 fT Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE1 Rank Range B 60~120 C 100~200 D 160~320