DC COMPONENTS CO., LTD.
R
2SB564A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -30 -25 -5 -1 800 +150 -55 to +150 Unit V V V A mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min -30 -25 -5 70 2%
Typ 110 18
Max -100 -0.5 -1.2 400 -
Unit V V V nA V V MHz pF
Test Conditions IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-100µA, IC=0 VCB=-30V, IE=0 IC=-1A, IB=-100mA IC=-1A, IB=-100mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-6V, f=100MHz VCB=-6V, f=1MHz
VCE(sat) VBE(sat) hFE fT Cob
380µs, Duty Cycle
Classification of hFE
Rank Range O 70~140 Y 120~240 GR 200~400
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