2SD313

DC COMPONENTS CO., LTD. R 2SD313 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC PD PD TJ TSTG Rating 60 60 5 3 2 30 +150 -55 to +150 Unit V V V A W W o o .625(15.87) .570(14.48) 123 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2% Min 60 60 5 40 40 - Typ 8 Max 0.1 5 1 1 1.5 320 - Unit V V V mA mA mA V V MHz Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=60V, IB=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=1A, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=2V IC=0.5A, VCE=5V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) Classification of hFE1 Rank Range C 40~80 D 60~120 E 100~200 F 160~320