BC307

DC COMPONENTS CO., LTD. R BC307 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Pinning 1 = Collector 2 = Base 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating -50 -45 -5 -100 500 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCES BVCEO BVEBO ICES (1) Min -50 -45 -5 -0.55 120 2% Typ -2 -0.5 -0.7 -0.85 -0.62 130 - Max -15 -0.3 -0.6 -0.8 -1.1 -0.7 800 6 10 Unit V V V nA V V V V V MHz pF dB Test Conditions IC=-10µA, VEB=0 IC=-2mA, IB=0 IE=-10µA, IC=0 VCE=-45V, IB=0 IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V, f=50MHz VCB=-10V, f=1MHz VCE=-5V, IC=-200µA, f=1KHz, RS=2KΩ, B=200Hz Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance Noise Figure (1)Pulse Test: Pulse Width VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) hFE fT Cob NF 380µs, Duty Cycle Classification of hFE Rank Range A 120~220 B 180~460 C 380~800