BU407

DC COMPONENTS CO., LTD. R BU407 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in TV horizontal output and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .625(15.87) .570(14.48) .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .350(8.90) .330(8.38) 123 .640 Typ (16.25) Symbol VCEO VEBO IC IB PD TJ TSTG Rating 150 6 7 4 60 +150 -55 to +150 Unit V V A A W o o .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEO ICES IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT 380µs, Duty Cycle 2% Min 150 25 35 10 10 Typ - Max 5 1 1 1.2 200 - Unit V mA mA V V MHz Test Conditions IC=100mA, IB=0 VCE=400V VEB=6V, IC=0 IC=5A, IB=0.5A IC=5A, IB=0.5A IC=0.5A, VCE=5V IC=2A, VCE=5V IC=2A, VCE=5V IC=0.5A, VCE=10V, f=1MHz Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range B 35~85 C 75~125 D 115~200