LB125E

DC COMPONENTS CO., LTD. R LB125E DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for lighting applications and switch mode power supplies . TO-220AB .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 600 400 9 5 8 40 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 123 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 hFE1 Min 600 400 9 8 Typ - Max 100 100 0.5 0.7 1.1 1.1 1.2 35 - Unit V V V µA µA V V V V V - Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=10mA, IC=0 VCB=800V, IE=0 VCE=400V, IB=0 IC=1A, IB=0.2A IC=2A, IB=0.4A IC=3A, IB=0.75A IC=1A, IB=0.2A IC=2A, IB=0.4A IC=2A, VCE=5V IC=10mA, VCE=5V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) (1)Pulse Test: Pulse Width hFE2 10 380µs, Duty Cycle 2% Classification of hFE1 Rank Range B1 8~17 B2 15~21 B3 19~25 B4 23~31 B5 29~35