DC COMPONENTS CO., LTD.
R
MPSA14
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high current gain.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 500 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCES BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT Cob 380µs, Duty Cycle
Min 30 30 10 10K 20K 125 2%
Typ -
Max 0.1 0.1 1.5 2 6
Unit V V V µA µA V V MHz pF
Test Conditions IC=100µA, IE=0 IC=0.1mA, VBE=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Collector-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
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