1N4007

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-101-1B 1 AMP GENERAL PURPOSE SILICON DIODES FEATURES Low cost Low leakage Low forward voltage drop High current capacity Easily cleaned with freon, alcohol, chlorothene and similar solvents BL MECHANICAL SPECIFICATION ACTUAL SIZE OF DO-41 PACKAGE SERIES 1N4001 - 1N4007 DO - 41 LL BD (Dia) RoHS COMPLIANT MECHANICAL DATA Color Band Denotes Cathode LL Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.012 Ounces (0.34 Grams) LD (Dia) Sym BL BD LL LD Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71 Maximum In mm 5.2 0.205 0.107 0.034 2.7 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3§©! # ©©! £ ¡ #§1 ©§©& 6! ¤9 £ ¤§§¡ ¡ 3©E  £¥ #$) ! 7¨1¡ % ) " )#& 2©§& 6! ¤9 £ ©©¥ ¤3#3§ ¤9 §¨ ¤¨ ! # 7 D©A @ ! 9 8©0 ©§' 7©§¨ §©"6! ©¥ 54 1¡ % )$1 &! £ CB 7 ¡ ( %¡ ! ¡' %¦ ¤ 21 ¤)!" 3§ ¤! 0 §§§©¨! ¨ ¤( ©§' §§¨ ! ©! #$ £ ¡ ©§" §! ©£ !  ©  £ ©§¥ ¤ £ ¢  #! £& ¨ %¥$ #!  £ ¥ ¤ ¡   ¡ ¨¦ ¡ PARAMETER (TEST CONDITIONS) Series Number SYMBOL RATINGS æ åäãá àßßÞÝÛ ÚÙÙØ×Õ †å†8H†â††8H†Ü††H©ÖÓ©88H©ÐÑ8†8H©Êˆ†8H†Å 6†8H©Á ÔÔÓÒ ÏÎÎÍÌ ÉÈÈÇÆ ÁÄÄàUNITS ‰ Š ‰ ‡ ˆ ‡ …† „ ‚ƒ  8¢s~| {†x w y€} z y Operating and Storage Temperature Range ¦ — “†¢«©¢²©–3‘ — ©±¢«D¦ ¢D°3 ’D ¡ 5¯©¢®­Hª«D‘D ©§¢3D¥¢¤ ‹ ±° ´³±  “ ° ¨ ¨ “ ¯‘ ¬ ¥Œ— ’ ¨ ¦‘   š£œ  ¢¢ ‹35• œD3ž ¢œš˜ 5¢¢ ”3D¢Ž3Œ ‹ 6©¸8Hµ £  ¡  Ÿ › ™ —–• “ ’‘  º ¹ · ¶ TT gfd c 5e¢b ƒ Typical Junction Capacitance (Note 2) C †u v a` DY Typical Thermal Resistance, Junction to Ambient (Note 1) R †s t R 6Q ¾ ½ Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ T = 25 C @ T = 100 C I °C/W pF °C w †q r p XW UT 8V 6S Maximum Full Cycle Reverse Current @ T = 75 C (Note 1) ¼ » I †n o y 5x Maximum Forward Voltage at 1 Amp DC À ¿ V †k l m ‚ ¢€ I h I j Average Forward Rectified Current @ T = 75 C (Lead length = 0.375 in. (9.5 mm)) Peak Forward Surge Current (8.3 mSec single half sine wave superimposed on rated load) tr 6sr Maximum Peak Recurrent Reverse Voltage P I V ÿÿ ††ÿ¢þ gg ††f ùù 8†ø †8h ii †8• –– òò †¢ñ †ë ì qp 6i Maximum RMS Voltage V ýý 8†ü ed ††™ ÷ö 88õ ††’ ”“ 8¢‰ ‘ ð †ï †é ê v su Maximum DC Blocking Voltage V ûû ††û¢ú ˜˜ ††— ôô 8†ó †8‡ ˆˆ †8„ …… îî †¢í †ç è VOLTS AMPS VOLTS A H1 DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPDP-101-2B 1 AMP GENERAL PURPOSE SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES 1N4001 - 1N4007 1.2  ¨© Average Forward Current, Io (Amperes) Peak Forward Surge Current (Amperes) 1.0 0.8 0.6 0.2 0 0 50 100   150 180 ¦¦ ¨§¥ £ ¤¢ ¡ Ambient Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 2 ¤1 10 Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current (Amperes) 1.0 1.0 .1 0.7 08 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS TJ = 25 oC Peak Forward Surge Current (Amperes) Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE Pulse Duration (Milliseconds) FIGURE 6. PEAK FORWARD SURGE CURRENT ) 0 ) ' ( ' & % $ "# ! H2 ¬ª «© X §W ¨§ ¨§¦ ¥¥ ¨§¤ 0.01 0.6 0 40 b aY ` ‚ –‘” “‘‰‡ ‚ — y’•‚ ’ˆ† … „ … a‚  yywu „‚ƒ €xv f sg r p t¨qhig ¨± ² ° ¨¯ R P Q h ddph„ … ‡ea¨’¨˜ ™ y˜ ® ¨­ .01 º ¶µ · ˆ¹ ¸¨q´k³ 0.1 s ƒˆ„ ƒ‚§ q…„n yp € }‰ ~|¨|¨qqz y¨x wtur qVo {j v sp ‡ lj n ˆ† tm¨qki 0.1 ‘£œ ¡ ‘ Ÿ š œ › š ™ — §¢uV  w’ž ¨ƒwqq˜ – •” ’‘ VV“ §uywyŠ Ž‹Œ‹ Á À ¿ ¿ ½ t¨§¾¼k» UT VS S fff ¨a§e II ¨§H d §c  ¨ 0.4    ¨  § @@ ¨¤9 B§A 5 8 6 7 E C D ¨G§F G 4 §3