SB400L

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRSB-400-1C ABSB-400-1C 4 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION ACTUAL SIZE OF SB4 PACKAGE DT SB404L _ + VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE SURGE OVERLOAD RATING TO 200 AMPS PEAK SERIES: SB400L - SB410L ASB404L - ASB408L C D DT SB404L _ + D1 UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT MECHANICAL DATA _ + L1 L B Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed ) Polarity: Marked on case Mounting Position: Any. Weight: 0.2 Ounces (5.6 Grams) SYM A A1 B B1 C D D1 L L1 MILLIMETERS MIN 6.4 2.06 1.22 4.57 19.1 15.62 14.38* 27.94 25.4 MAX 6.65 2.18 1.32 5.59 19.3 15.88 n/a n/a n/a INCHES MIN 0.252 0.061 0.048 0.180 0.750 0.615 0.566* 1.2 1.0 MAX 0.262 0.065 0.052 0.220 0.760 0.625 n/a n/a n/a B1 A1 A MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3§©! # ©©! £ ¡ #§1 ©§©& 6! ¤9 £ ¤§§¡ ¡ 3©E  £¥ #$) ! 7¨1¡ % ) " )#& 2©§& 6! ¤9 £ ©©¥ ¤3#3§ ¤9 §¨ ¤¨ ! # 7 D©A @ ! 9 8©0 ©§' 7©§¨ §©"6! ©¥ 54 1¡ % )$1 &! £ CB 7 ¡ ( %¡ ! ¡' %¦ ¤ 21 ¤)!" 3§ ¤! 0 §§§©¨! ¨ ¤( ©§' §§¨ ! ©! #$ £ ¡ ©§" §! ©£ !  ©  £ ©§¥ ¤ £ ¢  #! £& ¨ %¥$ #!  £ ¥ ¤ ¡   ¡ ¨¦ ¡ Series Number 6 ‚ Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method) T = 150 C Average Forward Rectified Current @ T = 50 C I V V It 6Dú üû I AMPS °C ¢ ¡ÿ   Typical Thermal Resistance E15 — – • ” “’ ‘  ‰ ‘  ‚ R R œ~~n€ R¡RŠ vR|Rw ~~w yv~yvnR5RRf“fz~vp fRšR‰o n‚fRl„~ RŠ } t R‘v˜f–¡t~w ~ffxˆff st ¡~• m p x x ‚ m „Ž ‚ƒ›z }u ’ t‘ ’ ‘ t|‘ …t‘“rw“ ‹ ‚†… x x• m †… ‚ƒ s ™ r zq — |z }|{z wu rqp ‚ } ’“ x{ s x ’‘ x ~w n‘ v”vf| f{ ~vpR‹~€ ‚Rˆ‡“‚¡~xRn RŽ R‹ fŠ l„“‰o Rˆ‡“¡†~…l~ƒ ‚~|ft~w Rv¡yyfvt s fno nlf¡"8f ƒ †… ‹ ‚ m Œ s } o ‚ƒ ‚ „ € z }|{z x wu rqp mk jih g £f“¡ ¢  Ÿ ~“ž Junction to Ambient (Note 1) Junction to Lead (Note 2) R R ˆ 8† ‡ … 8R‚ „ƒ 4 53 2 V VOLTS C/W w €€y 5¡¡x 1 ©0 @ T = 25 C Maximum Reverse Current at Rated V @T = 125 C Minimum Insulation Breakdown Voltage (Circuit to Case) ) ( % ©$ I ¡u v t þ Sý Maximum Forward Voltage (Per Diode) at 4 Amps DC ' & V ¡¡` crf85i fd c5` 8X sX YX qp hge b a Y ©"©©  #!  V ¥ ¡£ ¤ Maximum Avalanche Voltage 5¡RU5RRQ¡5H WWVT SSPP II  ¡©§ ¦ ¨ Minimum Avalanche Voltage V W¢dab` YWV U eVc XV 5¡E¡¡A¡86 GFD CB@ 97 RQ S8P Junction Operating and Storage Temperature Range T ,T T I VOLTS A ù Ò8WÑ Ò W8˜WW¼8DÈWÅWtWW¨W8¼W8¸ ÐÏÎ ÍÌË ÊÉÇ ÆÄ Ã ÁÀ¿ ¾½» º¹ ¡¡d ee ¡˜ ™ ø 6v Yv €yx w V ÕW8Ó Ô ut 66t V ¡¡ W¡W5  Ÿ › š ˜ ž56œ™88—z88zSŒ88ŒS8‡88„W~WzvS8v –•”“ ’‘ Ž‹ Š‰ˆ †……ƒ ‚€ }|{y x w u ‡st‡qnkh‡e˜‡‘”‡‘ˆ‰‡…ƒ rp om lj ig fd ™— –•“ ’ †„ ·W8˜WW´W8¨WW¨8¢­WtWW¨WW¥W¢ ·¶ µµ³ ²²± °°¯ ®®¬ «ª ©©§ ¦¦¤ ££ ö õ ô ì ó ð ç ò ð é …‘‡âWâñ ‡ð ç ç ë ï 6Ùè îíí è …ê è æ å äã ßá ß …‘‡âWâà ß H6هdÙ…Ö ÞÝÜÜ ×ÛÚØ × PARAMETER (TEST CONDITIONS) RATINGS SYMBOL UNITS sWp rq ÷ VOLTS AMPS SEC i h g f DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRSB-400-2C ABSB-400-2C 4 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES SB400L - SB410L and SERIES ASB404L - ASB408L ËË n~Ê 5.0 Average Forward Current, Io (Amperes) 4.0 Peak Forward Surge Current (Amperes) 3.0 2.0 1.0 Ambient Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current Amperes 10 NOTE 3 1.0 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE NOTES NOTE 4 (1) Bridge Mounted on 3.0" Sq. x 0.11" Thick (7.5cm Sq. x 015cm) Aluminum Plate (2) T = 150 C (3) T = 25 C; Pulse Width = 300mSec; 1%Duty Cycle (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p ¸¸ ~‰· º “¹ ¶ ½ R» ¼ Ä Ã Â Á  Á Capacitance, pF Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE ¬ « ª © “ ¦§ ¥ ¨ E16 Én“È É ÞÜ RÝÛ îíë ~“ì~“é~æ êêè ç Ç “Æ å nä c~“ðñï ôöóóò õ ã ~â ýúù c~yøñ÷ û þü á ~à Å Ú nÙ 0 0 50 100 150 Ø n× 60Hz Resistive or Inductive Loads ÎÍ n“Ì ÑÐ n“Ï ÔÓ n“Ò ÖÖ n“Õ NOTE 1 NOTE 2 ß ¢  £ÿ ¡ÿ § ¦¤ ¥    ¨ © ¤  ¦ ~~´ µµ ~²“± ³ ~°“¯ ° ~­ ® ~~¾ À¿