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BAW56T

BAW56T

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BAW56T - SURFACE MOUNT FAST SWITCHING DIODE - Diodes Incorporated

  • 数据手册
  • 价格&库存
BAW56T 数据手册
BAS16T, BAW56T, BAV70T, BAV99T SURFACE MOUNT FAST SWITCHING DIODE Features · · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance NEW PRODUCT SOT-523 Dim A C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ A B BC E Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking: See Diagrams Below & Page 2 Weight: 0.002 grams (approx.) Ordering Information, see Page 2 TOP VIEW B G H K C D G H J K L M N a N M J D L All Dimensions in mm BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 2) Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 2) Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range Single diode Double diode Symbol VRRM VRWM VR VR(RMS) IFM IFRM IFSM Pd RqJA Tj , TSTG Value 85 60 155 75 500 4.0 1.0 0.5 150 833 -65 to +150 Unit V V mA mA A mW °C/W °C DS30260 Rev. 3 - 2 1 of 3 BAS16T, BAW56T, BAV70T, BAV99T Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 85 ¾ Max ¾ 0.715 0.855 1.0 1.25 2.0 100 60 30 1.5 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 100mA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 25V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W NEW PRODUCT Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Leakage Current (Note 1) Typical Total Capacitance Reverse Recovery Time Notes: IR CT trr ¾ ¾ ¾ 1. Short duration test pulse to minimize self-heating effect. 2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. IF, INSTANTANEOUS FORWARD CURRENT (mA) 300 1000 250 IF, FORWARD CURRENT (mA) 200 Single diode loaded 100 TA = +150°C 150 100 Double diode loaded TA = +125°C 10 TA = +75°C TA = +25°C TA = -25°C 0.1 400 600 800 1000 1200 50 0 0 50 100 150 200 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2, Typical Forward Characteristics 10 1 VR = 75V VR = 20V 0.1 0.01 0.001 0.0001 0 50 100 150 200 Tj, JUNCTION TEMPERATURE (° C) Fig. 3, Typical Reverse Characteristics Ordering Information (Note 3) Device BAS16T-7 BAW56T-7 BAV70T-7 BAV99T-7 Notes: Packaging SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datas heets/ap02007.pdf. DS30260 Rev. 3 - 2 2 of 3 BAS16T, BAW56T, BAV70T, BAV99T Marking Information NEW PRODUCT XXYM XX = Product Type Marking Code (See Page 1, e.g. A2 = BAS16T) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R March 3 Apr 4 2005 S May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30260 Rev. 3 - 2 3 of 3 BAS16T, BAW56T, BAV70T, BAV99T
BAW56T 价格&库存

很抱歉,暂时无法提供与“BAW56T”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BAW56-TP
  •  国内价格
  • 1+0.09
  • 100+0.084
  • 300+0.078
  • 500+0.072
  • 2000+0.069
  • 5000+0.0672

库存:2603

BAW56T-7-F
  •  国内价格
  • 1+0.24089
  • 10+0.22236
  • 30+0.21865
  • 100+0.20753

库存:123