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BSS123-7-F

BSS123-7-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    BSS123-7-F - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
BSS123-7-F 数据手册
BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Mechanical Data • • • • • • • • • SOT-23 NEW PRODUCT Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Drain D Gate G Source S TOP VIEW Equivalent Circuit TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID IDM Value 100 100 ±20 170 680 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 20KΩ Gate-Source Voltage Drain Current (Note 1) Continuous Continuous Pulsed Thermal Characteristics @TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 300 417 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Rise Time Turn-Off Fall Time Turn-On Delay Time Turn-Off Delay Time Notes: 1. 2. 3. 4. @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSSF VGS(th) RDS (ON) gFS VSD Ciss Coss Crss tr tf tD(ON) tD(OFF) Min 100 ⎯ ⎯ 0.8 ⎯ ⎯ 80 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.4 ⎯ ⎯ 370 0.84 29 10 2 ⎯ ⎯ ⎯ ⎯ Max ⎯ 1.0 10 50 2.0 6.0 10 ⎯ 1.3 60 15 6 8 16 8 13 Unit V µA nA nA V Ω mS V pF pF pF ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.28A, RGEN = 50Ω, VGS = 10V Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Halogen and Antimony Free. Short duration pulse test used to minimize self-heating effect. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS123 Document number: DS30366 Rev.8 - 2 1 of 3 www.diodes.com May 2008 © Diodes Incorporated BSS123 0.7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 ID, DRAIN-SOURCE CURRENT (A) 0.6 0.5 0.4 0.3 0.2 2.0 N EW PRODUCT 1.6 1.2 0.1 0 0 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 5 0.8 0.1 0.3 0.4 0.5 0.6 0.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.2 2.2 RDS(ON), NORMALIZED ON-RESISTANCE VDS = VGS ID = 250µA 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 VGS = 10V ID = 170m 1.1 1 0.9 0.8 0.7 -50 25 50 0 -25 75 100 125 150 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Gate Threshold Variation with Temperature 75 100 125 150 -25 25 0 50 TJ, JUNCTION TEMPERATURE (ºC) Fig. 4 On-Resistance Variation with Temperature 50 40 C, CAPACITANCE (pF) 30 20 Ciss 10 Coss Crss 0 0 20 10 5 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 25 BSS123 Document number: DS30366 Rev.8 - 2 2 of 3 www.diodes.com May 2008 © Diodes Incorporated BSS123 Ordering Information Part Number BSS123-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information N EW PRODUCT K23 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September K23 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 2007 U Mar 3 Apr 4 YM 2008 V May 5 Jun 6 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS123 Document number: DS30366 Rev.8 - 2 3 of 3 www.diodes.com May 2008 © Diodes Incorporated
BSS123-7-F 价格&库存

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BSS123-7-F
  •  国内价格
  • 20+0.1368
  • 200+0.12762
  • 500+0.11844
  • 1000+0.10926
  • 3000+0.10466
  • 6000+0.09824

库存:8146